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S29CD016G
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Data Sheet
Distinctive Characteristics
Architecture Advantages
Simultaneous Read/Write operations -- Two bank architecture: large bank/ small bank -- Data can be read from bank while executing erase/ program functions in other bank -- Zero latency between read and write operations User-Defined x32 Data Bus Dual Boot Block -- Top and bottom boot sectors in the same device Flexible sector architecture -- Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes sectors Manufactured on 170 nm process technology SecSi (Secured Silicon) Sector (256 Bytes) -- Factory locked and identifiable: 16 bytes for secure, random factory Electronic Serial Number; remainder may be customer data programmed by SpansionTM -- Customer lockable: Can be read, programmed, or erased just like other sectors. Once locked, data cannot be changed Programmable Burst interface -- Interface to any high performance processor -- Modes of Burst Read Operation: -- Linear Burst: 4 double words and 8 double words with wrap around Program Operation -- Ability to perform synchronous and asynchronous write operations of burst configuration register settings independently Single power supply operation -- Optimized for 2.5 to 2.75 volt read, erase, and program operations Compatibility with JEDEC standards (JC42.4) -- Software compatible with single-power supply Flash -- Backward-compatible with AMD Am29LV and Am29F and Fujitsu MBM29LV and MBM29F flash memories Ultra low power consumption -- Burst Mode Read: 90 mA @ 66 MHz max, -- Program/Erase: 50 mA max -- Standby mode: CMOS: 60 A max 1 million write cycles per sector typical 20 year data retention typical VersatileI/OTM control -- Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VIO pin -- 1.65 V to 2.75 V compatible I/O signals -- 3.6 V tolerant I/O signals
Software Features
Persistent Sector Protection -- A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector (requires only VCC levels) Password Sector Protection -- A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-definable 64-bit password Supports Common Flash Interface (CFI) Unlock Bypass Program Command -- Reduces overall programming time when issuing multiple program command sequences Data# Polling and toggle bits -- Provides a software method of detecting program or erase operation completion
Hardware Features
Program Suspend/Resume & Erase Suspend/ Resume -- Suspends program or erase operations to allow reading, programming, or erasing in same bank Hardware Reset (RESET#), Ready/Busy# (RY/ BY#), and Write Protect (WP#) inputs ACC input -- Accelerates programming time for higher throughput during system production Package options -- 80-pin PQFP -- 80-ball Fortified BGA
Performance Characteristics
High performance read access -- Initial/random access times as fast as 54 ns -- Burst access time as fast as 9 ns for ball grid array package
Publication Number S29CD016_00
Revision A
Amendment 4
Issue Date November 5, 2004
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion LLC. Spansion LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided "as is" without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the use of the information in this document.
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General Description
The S29CD016G is a 16 Megabit, 2.5 Volt-only single power supply burst mode flash memory device. The device can be configured for 524,288 double words. The device can also be programmed in standard EPROM programmers. To eliminate bus contention, each device includes separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls. Additional control inputs are required for synchronous burst operations: Load Burst Address Valid (ADV#), and Clock (CLK). Each device requires only a single 2.5 or 2.6 Volt power supply (2.5 V to 2.75 V) for both read and write functions. A 12.0-volt VPP is not required for program or erase operations, although an acceleration pin is available if faster programming performance is required. The device is entirely command set compatible with the JEDEC single-powersupply Flash standard. The software command set is compatible with the command sets of the 5 V Am29F and 3 V Am29LV Flash families. Commands are written to the command register using standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. The device can begin programming or erasing in one bank, and then simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. See "Simultaneous Read/Write Operations Overview and Restrictions" on page 14. The device provides a 256-byte SecSiTM (Secured Silicon) Sector with an onetime-programmable (OTP) mechanism. In addition, the device features several levels of sector protection, which can disable both the program and erase operations in certain sectors or sector groups: Persistent Sector Protection is a command sector protection method that replaces the old 12 V controlled protection method; Password Sector Protection is a highly sophisticated protection method that requires a password before changes to certain sectors or sector groups are permitted; WP# Hardware Protection prevents program or erase in the two outermost 8 Kbytes sectors of the larger bank. The device defaults to the Persistent Sector Protection mode. The customer must then choose if the Standard or Password Protection method is most desirable. The WP# Hardware Protection feature is always available, independent of the other protection method chosen. The VersatileI/OTM (VCCQ) feature allows the output voltage generated on the device to be determined based on the VIO level. This feature allows this device to operate in the 1.8 V I/O environment, driving and receiving signals to and from other 1.8 V devices on the same bus. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, by reading the DQ7 (Data# Polling), or DQ6 (toggle)
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status bits. After a program or erase cycle is completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The password and software sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system at VCC level. The Program/Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The device offers two power-saving features. When addresses are stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. Spansion Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The data is programmed using hot electron injection.
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Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .7 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Block Diagram of Simultaneous Read/Write Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 10 Special Package Handling Instructions . . . . . . . 11 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Logic Symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 14 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 15
Table 1. Device Bus Operation . . . . . . . . . . . . . . . . . 15
Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Sector and Sector Groups ...........................................................................................28 Persistent Sector Protection .......................................................................................28 Password Sector Protection ........................................................................................28 WP# Hardware Protection .........................................................................................28
Persistent Sector Protection ............................................................ 29
Persistent Protection Bit (PPB) ..................................................................................29 Persistent Protection Bit Lock (PPB Lock) .............................................................29 Dynamic Protection Bit (DYB) ...................................................................................29
Table 11. Sector Protection Schemes . . . . . . . . . . . . . 30
VersatileI/OTM (VIO) Control .............................................................. 15 Requirements for Reading Array Data ........................................... 16 Simultaneous Read/Write Operations Overview and Restrictions .......................................... 16
Overview ............................................................................................................................16 Restrictions ........................................................................................................................16
Persistent Sector Protection Mode Locking Bit ...........................31 Password Protection Mode .................................................................31 Password and Password Mode Locking Bit ...................................32
64-bit Password ............................................................................................................... 32
Table 2. Bank Assignment for Boot Bank Sector Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Write Protect (WP#) ..........................................................................33 SecSiTM (Secured Silicon) Sector Protection ..................................33 SecSi Sector Protection Bit ................................................................34 Persistent Protection Bit Lock ..........................................................34 Hardware Data Protection ................................................................34
Low VCC Write Inhibit .................................................................................................. 34 Write Pulse "Glitch" Protection ................................................................................ 34 Logical Inhibit ................................................................................................................... 35 Power-Up Write Inhibit ................................................................................................ 35 VCC and VIO Power-up And Power-down Sequencing ...................................... 35
Simultaneous Read/Write Operations With Zero Latency ..... 17
Table 3. Ordering Option 00 . . . . . . . . . . . . . . . . . . . 17 Table 4. Ordering Option 01 . . . . . . . . . . . . . . . . . . . 17
Writing Commands/Command Sequences ................................... 17
Accelerated Program and Erase Operations ..........................................................18 Autoselect Functions ......................................................................................................18
Table 12. Sector Addresses for Ordering Option 00 . . . 35 Table 13. Sector Addresses for Ordering Option 01 . . . 37
Automatic Sleep Mode (ASM) ........................................................... 18
Standby Mode ...................................................................................................................18
Common Flash Memory Interface (CFI) . . . . . . . 39
Table 14. CFI Query Identification String . . . . . . . . . . 39 Table 15. CFI System Interface String . . . . . . . . . . . . 40 Table 16. Device Geometry Definition . . . . . . . . . . . . 41 Table 17. CFI Primary Vendor-Specific Extended Query 42
RESET#: Hardware Reset Pin ............................................................ 19 Output Disable Mode ........................................................................... 19 Autoselect Mode ................................................................................... 19
Table 5. S29CD016G Autoselect Codes (High Voltage Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Asynchronous Read Operation (Non-Burst) ...............................20
Figure 1. Asynchronous Read Operation . . . . . . . . . . 21
Synchronous (Burst) Read Operation ............................................. 21 Linear Burst Read Operations ........................................................... 21
Table 6. 32- Bit Linear and Burst Data Order . . . . . . . 22
CE# Control in Linear Mode ...................................................................................... 23 ADV# Control In Linear Mode .................................................................................. 23 RESET# Control in Linear Mode ............................................................................... 23 OE# Control in Linear Mode ..................................................................................... 23 IND/WAIT# Operation in Linear Mode ................................................................. 23
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 44 Reading Array Data in Non-burst Mode ...................................... 44 Reading Array Data in Burst Mode ................................................ 44 Read/Reset Command .........................................................................45 Autoselect Command ..........................................................................45 Program Command Sequence ...........................................................45 Accelerated Program Command ..................................................... 46 Unlock Bypass Command Sequence .............................................. 46
Figure 4. Program Operation . . . . . . . . . . . . . . . . . . 47
Unlock Bypass Entry Command ................................................................................. 47 Unlock Bypass Program Command ..........................................................................48 Unlock Bypass Chip Erase Command ......................................................................48 Unlock Bypass CFI Command ....................................................................................48 Unlock Bypass Reset Command ................................................................................48
Table 7. Valid Configuration Register Bit Definition for IND/ WAIT# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 2. End of Burst Indicator (IND/WAIT#) Timing for Linear 4-Double-Word Burst Operation . . . . . . . . . . . 24
Burst Access Timing Control ...................................................................................... 24 Initial Burst Access Delay Control ............................................................................24
Chip Erase Command ......................................................................... 48 Sector Erase Command ..................................................................... 49
Figure 5. Erase Operation . . . . . . . . . . . . . . . . . . . . 50
Table 8. Burst Initial Access Delay . . . . . . . . . . . . . . 24 Figure 3. Burst Access Timing . . . . . . . . . . . . . . . . . 25
Burst CLK Edge Data Delivery ................................................................................... 25 Burst Data Hold Control ............................................................................................. 25 Asserting RESET# During A Burst Access .............................................................. 25
Sector Erase and Program Suspend Command .......................... 50 Sector Erase and Program Suspend Operation Mechanics .......51
Table 18. Allowed Operations During Erase/Program Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Configuration Register ........................................................................ 25
Table 9. Configuration Register Definitions . . . . . . . . . 26 Table 10. Configuration Register After Device Reset . . 28
Initial Access Delay Configuration ..................................................28 4
Sector Erase and Program Resume Command ............................52 Configuration Register Read Command ........................................52 Configuration Register Write Command ......................................52 Common Flash Interface (CFI) Command ....................................52 SecSi Sector Entry Command ............................................................53 S29CD016_00_A4 November 5, 2004
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Password Program Command .......................................................... 54 Password Verify Command ............................................................... 54 Password Protection Mode Locking Bit Program Command . 55 Persistent Sector Protection Mode Locking Bit Program Command ......................................................................................................... 55 SecSi Sector Protection Bit Program Command ........................ 55 PPB Lock Bit Set Command .............................................................. 55 DYB Write Command ........................................................................ 56 Password Unlock Command ............................................................. 56 PPB Program Command ..................................................................... 56 All PPB Erase Command .................................................................... 57 DYB Write .............................................................................................. 57 PPB Lock Bit Set .................................................................................... 57 DYB Status .............................................................................................. 57 PPB Status ............................................................................................... 57 PPB Lock Bit Status .............................................................................. 57 Non-volatile Protection Bit Program And Erase Flow ............. 58
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
matic Sleep Currents) . . . . . . . . . . . . . . . . . . . . . . . 69 Figure 11. Typical ICC1 vs. Frequency . . . . . . . . . . . . 69 Figure 12. Test Setup . . . . . . . . . . . . . . . . . . . . . . . 70 Table 23. Test Specifications . . . . . . . . . . . . . . . . . . . 70
Key to Switching Waveforms . . . . . . . . . . . . . . . . 70 Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . 70
Figure 13. Input Waveforms and Measurement Levels 70
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .71
Figure 14. VCC and VIO Power-up Diagram. . . . . . . . . 71 Table 24. Asynchronous Read Operations . . . . . . . . . . 72 Figure 15. Conventional Read Operations Timings . . . 72 Table 25. Burst Mode Read . . . . . . . . . . . . . . . . . . . . 73 Figure 16. Burst Mode Read (x32 Mode) . . . . . . . . . . 74 Figure 17. Asynchronous Command Write Timing . . . . 75 Figure 18. Synchronous Command Write/Read Timing 75 Table 26. Hardware Reset (RESET#) . . . . . . . . . . . . . 76 Figure 19. RESET# Timings . . . . . . . . . . . . . . . . . . . 76 Figure 20. WP# Timing . . . . . . . . . . . . . . . . . . . . . . 77 Table 27. Erase/Program Operations . . . . . . . . . . . . . 78 Figure 21. Program Operation Timings . . . . . . . . . . . 79 Figure 22. Chip/Sector Erase Operation Timings. . . . . 80 Figure 23. Back-to-back Cycle Timings . . . . . . . . . . . 80 Figure 24. Data# Polling Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . 81 Figure 25. Toggle Bit Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . 81 Figure 26. DQ2 vs. DQ6 for Erase/Erase Suspend Operations 82 Figure 27. Synchronous Data Polling Timing/Toggle Bit Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 Figure 28. Sector Protect/Unprotect Timing Diagram . 83 Table 28. Alternate CE# Controlled Erase/Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 Figure 29. Alternate CE# Controlled Write Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 Table 29. Erase and Programming Performance . . . . . 86 Table 30. PQFP and Fortified BGA Pin Capacitance . . . . 86
Table 19. Memory Array Command Definitions (x32 Mode) 59 Table 20. Sector Protection Command Definitions (x32 Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 61 DQ7: Data# Polling ............................................................................... 61
Figure 6. Data# Polling Algorithm . . . . . . . . . . . . . . 62
RY/BY#: Ready/Busy# ......................................................................... 63 DQ6: Toggle Bit I .................................................................................. 63 DQ2: Toggle Bit II ................................................................................ 64 Reading Toggle Bits DQ6/DQ2 ........................................................ 64
Figure 7. Toggle Bit Algorithm . . . . . . . . . . . . . . . . . 65
DQ5: Exceeded Timing Limits .......................................................... 66 DQ3: Sector Erase Timer .................................................................. 66
Table 21. Write Operation Status . . . . . . . . . . . . . . . 66
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . 67
Figure 8. Maximum Negative Overshoot Waveform . . 67 Figure 9. Maximum Positive Overshoot Waveform . . . 67
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . .67
Industrial (I) Devices ...................................................................................................... 67 Extended (E) Devices .................................................................................................... 67 VCC Supply Voltages ...................................................................................................... 67 VIO Supply Voltages ....................................................................................................... 67
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 87
PRQ080-80-Lead Plastic Quad Flat Package 87 LAA080-80-ball Fortified Ball Grid Array (13 x 11 mm) 88
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .68
Table 22. CMOS Compatible . . . . . . . . . . . . . . . . . . . 68 Figure 10. ICC1 Current vs. Time (Showing Active and Auto-
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 89
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Product Selector Guide
Part Number Standard Voltage Range: VCC = 2.5 - 2.75 V Speed Option (Clock Rate) Max Initial/Asynchronous Access Time, ns (tACC) Max Burst Access Delay (ns) Max Clock Rate (MHz) Min Initial Clock Delay (clock cycles) See Figure 3 Max CE# Access, ns (tCE) Max OE# Access, ns (tOE) S29CD016G Synchronous/Burst or Asynchronous 0P (66 MHz) 54 9 FBGA/ 9.5 PQFP 66 4 58 20 0M (56 MHz) 64 10 FBGA/ 10 PQFP 56 4 69 20 0J (40 MHz) 67 17 40 3 71 28
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Block Diagram
VCC VSS RY/BY#
DQ0 -DQ31 A0-A18
Erase Voltage Generator
VIO
Input/Output Buffers
WE# ACC WP# RESET#
State Control Command Register
PGM Voltage Generator Chip Enable Output Enable Logic Data Latch
CE# OE#
Y-Decoder VCC Detector
Y-Gating
Address Latch
Timer
X-Decoder
Cell Matrix
ADV# CLK
Burst State Control
IND/ WAIT#
Burst Address Counter A0-A18
DQ0-DQ15 A0-A18
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Block Diagram of Simultaneous Read/Write Circuit
VCC VSS
OE#
Y-Decoder
A0-A18
Upper Bank Address
Upper Bank (Bank 1)
Latches and Control Logic
A0-A18 RESET# WE# CE# ADV# DQ0-DQ31 A0-A18 STATE CONTROL & COMMAND REGISTER RY/BY# Status
X-Decoder
DQ0-DQ31
A0-A18
DQ0-DQ31
Control
X-Decoder
A0-A18
Lower Bank Address
Lower Bank (Bank 0)
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Latches and Control Logic
Y-Decoder
DQ0-DQ31
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Connection Diagrams
IND/WAIT#
RESET#
RY/BY#
ADV#
WE#
WP#
MCH
OE#
CE#
DQ16 DQ17 DQ18 DQ19 VCCQ VSS DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 VCCQ VSS DQ28 DQ29 DQ30 DQ31 MCH A0 A1 A2
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 80-pin PQFP 53 52 Top View 51 50 49 48 47 46 45 44 43 42 41 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
CLK
VCC
VSS
NC
NC
NC
VCCQ
DQ15 DQ14 DQ13 DQ12 VSS VCCQ DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 VSS VCCQ DQ3 DQ2 DQ1 DQ0 NC A18 A17 A16
A10
A11
A12
A13
ACC
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A15
VSS
A3
A4
A5
A6
A7
A8
VCC
A9
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Connection Diagrams
80-Ball Fortified BGA
(Balls facing Down)
A8 A2 A7 A3 A6 A6 A5 VSS A4 ACC A3 VCC A2 A14 A1 A15
B8 A1 B7 A4 B6 A5 B5 A8 B4 A9 B3 A12 B2 A13 B1 A16
C8 A0 C7 MCH C6 A7 C5 NC C4 A10 C3 A11 C2 A18 C1 A17
D8 DQ29 D7 DQ30 D6 DQ31 D5 NC D4 NC D3 NC D2 DQ0 D1 DQ3
E8 VCCQ E7 DQ26 E6 DQ28 E5 DQ27 E4 DQ1 E3 DQ2 E2 DQ4 E1 VCCQ
F8 VSS F7 DQ24 F6 DQ25 F5 RY/BY# F4 DQ5 F3 DQ6 F2 DQ7 F1 VSS
G8 VCCQ G7 DQ23 G6 DQ21 G5 DQ22 G4 DQ9 G3 DQ10 G2 DQ8 G1 VCCQ
H8 DQ20 H7
J8 DQ16 J7
K8 MCH K7 NC K6 WE# K5 VCC K4 VSS K3 CLK K2 RESET# K1 VCCQ
DQ18 IND/WAIT# H6 DQ19 H5 DQ17 H4 WP# H3 DQ11 H2 DQ12 H1 DQ13 J6 OE# J5 CE# J4 NC J3 ADV# J2 DQ14 J1 DQ15
Special Package Handling Instructions
Special handling is required for Flash Memory products in molded packages (BGA). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time.
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Pin Configuration
A0-A18 DQ0-DQ31 CE# OE# WE# VSS NC RY/BY# = = = = = = = = 19-bit address bus for 16 Mb device. A9 supports 12 V autoselect inputs. 32-bit data inputs/outputs/float Chip Enable Input. This signal is asynchronous relative to CLK for the burst mode. Output Enable Input. This signal is asynchronous relative to CLK for the burst mode. Write enable. This signal is asynchronous relative to CLK for the burst mode. Device ground Pin not connected internally Ready/Busy output and open drain. When RY/BY# = VIH, the device is ready to accept read operations and commands. When RY/BY# = VOL, the device is either executing an embedded algorithm or the device is executing a hardware reset operation (A pull-up resistor is required.). Clock Input that can be tied to the system or microprocessor clock and provides the fundamental timing and internal operating frequency. Load Burst Address input. Indicates that the valid address is present on the address inputs. End of burst indicator for finite bursts only. IND/ WAIT# is low when the last word in the burst sequence is at the data outputs. Otherwise the IND/ WAIT# is high when CE# is low. Write Protect input. When WP# = VOL, the two outermost bootblock sector in the 75% bank are write protected regardless of other sector protection configurations. Acceleration input. When taken to 12 V, program and erase operations are accelerated. When not used for acceleration, ACC = VSS or VCC. Output Buffer Power Supply (1.65 V to 2.75 V, 3.6 V tolerant) Chip Power Supply (2.5 V to 2.75 V) Hardware reset input Must Connect High (to VCC)
CLK
=
ADV# IND/WAIT#
= =
WP#
=
ACC
=
VIO (VCCQ) VCC RESET# MCH
= = = =
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Logic Symbols
x32 Mode
19 A0-A18 CLK CE# OE# WE# RESET# ADV# ACC WP# VIO (VCCQ) RY/BY# IND/WAIT# DQ0-DQ31 32
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Ordering Information
The order number (Valid Combination) is formed by the following: S29CD016G 0J F A I 00 0
PACKING TYPE
0 2 3 = Tray = 7" Tape and Reel = 13" Tape and Reel
ADDITIONAL ORDERING OPTIONS
00 01 = 4 Mb in Bank 0, 12 Mb in Bank 1, WP# protects sectors 44 and 45 = 12 Mb in Bank 0, 4 Mb in Bank 1, WP# protects sectors 0 and 1
TEMPERATURE RANGE
I N A = Industrial (-40C to +85C) = Extended (-40C to +125C) = Standard
MATERIAL SET PACKAGE TYPE
Q F = Plastic Quad Flat Package (PQFP) = Ball Fortified Ball Grid Array, 1.0 mm pitch package
CLOCK FREQUENCY
0J 0M 0P = 40 MHz = 56 MHz = 66 MHz
DEVICE NUMBER/DESCRIPTION
S29CD016G 16 Megabit (512K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Manufactured on 170 nm floating gate technology
Valid Combinations for PQFP Packages S29CD016G0P S29CD016G0M S29CD016G0J QAI00 QAI01 QAN00 QAN01
Clock Frequency 66 MHz 56 MHz 40 MHz
Valid Combinations for Fortified BGA Packages Order Number S29CD016G0P S29CD016G0M S29CD016G0J FAI00 FAI01 FAN00 FAN01 Package Marking CD016G0PFA CD016G0MFA CD016G0JFA I00 I01 N00 N01
Clock Frequency 66 MHz 56 MHz 40 MHz
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations.
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Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail.
Table 1.
Operation Read Asynchronous Write Synchronous Write Standby (CE#) Output Disable Reset CE# L L L H L X OE# L H H X H X
Device Bus Operation
RESET# H H H H H L X X X X X X CLK X X ADV# X X Addresses AIN AIN AIN X HIGH Z X Data (DQ0-DQ31) DOUT DIN DIN HIGH Z HIGH Z HIGH Z 00000001h, (protected) A6 = H 00000000h (unprotect) A6 = L
WE# H L L X H X
PPB Protection Status (Note 2)
L
L
H
H
X
X
Sector Address, A9 = VID, A7 - A0 = 02h
Burst Read Operations Load Starting Burst Address Advance Burst to next address with appropriate Data presented on the Data bus Terminate Current Burst Read Cycle Terminate Current Burst Read Cycle with RESET# Terminate Current Burst Read Cycle; Start New Burst Read Cycle
Legend: L = Logic Low = VIL, H = Logic High = VIH, X = Don't care. Notes: 1. WP# controls the two outermost sectors of the top boot block or the two outermost sectors of the bottom boot block. 2. DQ0 reflects the sector PPB (or sector group PPB) and DQ1 reflects the DYB.
L L
X L
H H
H H H
AIN X
X Burst Data Out
H X
X X
H H
H L X
X X
X X
HIGH Z HIGH Z
L
H
H
H
AIN
X
VersatileI/OTM (VIO) Control
The VersatileI/O (VIO) control allows the host system to set the voltage levels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the VIO pin.
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The output voltage generated on the device is determined based on the VIO (VCCQ) level. A VIO of 1.65-1.95 volts is targeted to provide for I/O tolerance at the 1.8 volt level. A VCC and VIO of 2.5-2.75 volts makes the device appear as 2.5 volt-only.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. Address access time (tACC) is the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from stable addresses and stable CE# to valid data at the output pins. The output enable access time (tOE) is the delay from the falling edge of OE# to valid data at the output pins (assuming the addresses are stable for at least tACC-tOE time and CE# is asserted for at least tCE-tOE time). See ""Reading Array Data in Non-burst Mode" on page 42" for more information. Refer to the AC Read Operations table for timing specifications and to Table 1 on page 20 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data.
Simultaneous Read/Write Operations Overview and Restrictions
Overview
The Simultaneous Read/Write feature allows a program or erase operation to be executed in one (busy) bank, while performing other operations in the other bank (non-busy). The Simultaneous Read/Write operation of this device was optimized for applications that could most benefit from this capability. These applications store code in the larger bank, while storing data in the smaller bank. The best example of this is when a Sector Erase Operation (as an embedded operation) in the smaller (busy) bank occurs, while performing a Burst/synchronous Read Operation in the larger (non-busy) bank.
Restrictions
The Simultaneous Read/Write function is tested by executing an embedded operation in the small (busy) bank while performing other operations in the big (non-busy) bank. However, the opposite case is neither tested nor valid. That is, it is not tested by executing an embedded operation in the big (busy) bank while performing other operations in the small (non-busy) bank. See the following tables, Table 2 on page 16, Table 18 on page 50, Table 12 on page 34, and Table 13 on page 36
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Table 2. Bank Assignment for Boot Bank Sector Devices
Bank Bank 0 Bank 1 Ordering Option 00 Small Bank Big Bank Ordering Option 01 Big Bank Small Bank
Simultaneous Read/Write Operations With Zero Latency
The device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Refer to the table in "DC Characteristics" on page 67 for read-while-program and read-while-erase current specifications. Simultaneous read/write operations are valid for both the main Flash memory array and the SecSi OTP sector. Simultaneous Read/Write is disabled during the CFI and Password Program/Verify operations. PPB Program/Erase operations and the Password Unlock operation permit reading data from the large (75%) bank while reading the operation status of these commands from the small (25%) bank.
Table 3. Ordering Option 00
Bank Bank 0 Bank 1 A18:A17 00 01, 1X
Table 4. Ordering Option 01
Bank Bank 0 Bank 1 A18:A17 0X, 10 11
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The "Sector Erase and Program Suspend Command" on page 49 contains details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 12 on page 34 and Table 13 on page 36 indicate the address space that each sector occupies. A "sector address" consists of the address bits required to uniquely select a sector. The "Command Definitions" on page 43 contain details regarding erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7-DQ0. Standard read
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cycle timing applies in this mode. Refer to "Autoselect Mode" on page 18 for more information. ICC2 and ICC3 in the DC Characteristics table represents the active current specification for erase or program modes. The "AC Characteristics" on page 70 section contains timing specification tables and timing diagrams for erase or program operations. When in Synchronous read mode configuration, the device is able to perform both asynchronous and synchronous write operations. CLK and ADV# address latch is supported in synchronous programming mode. During a synchronous write operation, to write a command or command sequence, (which includes programming data to the device and erasing sectors of memory), the system must drive ADV# and CE# to VIL, and OE# to VIH when providing an address to the device, and drive WE# and CE# to VIL, and CE# to VIH, when writing commands or data.
Accelerated Program and Erase Operations
The device offers accelerated program/erase operations through the ACC pin. When the system asserts VHH (12V) on the ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence to do accelerated programming. The device uses the higher voltage on the ACC pin to accelerate the operation. A sector that is being protected with the WP# pin is still protected during accelerated program or Erase. Note that the ACC pin must not be at VHH during any operation other than accelerated programming, or device damage may result. When accelerated program/erase is not in use, set ACC=Vss or ACC=Vcc.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7-DQ0. Standard read cycle timings apply in this mode. Refer to the "Autoselect Mode" on page 18 and "Autoselect Command" on page 44 sections for more information.
Automatic Sleep Mode (ASM)
The automatic sleep mode minimizes Flash device energy consumption. While in asynchronous mode, the device automatically enables this mode when addresses remain stable for tACC + 60 ns. The automatic sleep mode is independent of the CE#, WE# and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. While in synchronous mode, the device automatically enables this mode when either the first active CLK level is greater than tACC or the CLK runs slower than 5 MHz. Note that a new burst operation is required to provide new data. ICC8 in the "DC Characteristics" section represents the automatic sleep mode current specification.
Standby Mode
When the system is not responding or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input.
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The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at Vcc 0.2 V. The device requires standard access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. I CC5 in the "DC Characteristics" section represents the standby current specification. Caution: Entering the standby mode via the RESET# pin also resets the device to the read mode and floats the data I/O pins. Furthermore, entering ICC7 during a program or erase operation l leaves erroneous data in the address locations being operated on at the time of the RESET# pulse. These locations require updating after the device resumes standard operations. Refer to ""RESET#: Hardware Reset Pin" on page 18 for further discussion of the RESET# pin and its functions.
RESET#: Hardware Reset Pin
The RESET# pin is an active low signal that is used to reset the device under any circumstances. A logic "0" on this pin forces the device out of any mode that is currently executing back to the reset state. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device. To avoid a potential bus contention during a system reset, the device is isolated from the DQ data bus by tristating the data output pins for the duration of the RESET pulse. All pins are "don't care" during the reset operation. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains low until the reset operation is internally complete. This action requires between 1 s and 7s for either Chip Erase or Sector Erase. The RY/BY# pin can be used to determine when the reset operation is complete. Otherwise, allow for the maximum reset time of 11 s. If RESET# is asserted when a program or erase operation is not executing (RY/BY# = "1"), the reset operation completes within 500 ns. The Simultaneous Read/Write feature of this device allows the user to read a bank after 500 ns if the bank was in the read/reset mode at the time RESET# was asserted. If one of the banks was in the middle of either a program or erase operation when RESET# was asserted, the user must wait 11 s before accessing that bank. Asserting RESET# during a program or erase operation leaves erroneous data stored in the address locations being operated on at the time of device reset. These locations need updating after the reset operation is complete. See Figure 19, on page 75 for timing specifications. Asserting RESET# active during VCC and VIO power-up is required to guarantee proper device initialization until VCC and VIO have reached their steady state voltages.
Output Disable Mode
See Table 1 on page 14 for OE# Operation in Output Disable Mode.
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7-DQ0. This mode is primarily intended for programming equipment to automatically match a device
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to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 12 on page 34 (top boot devices) or Table 13 on page 36 (bottom boot devices). In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Tables 1 and). Table 5 shows the remaining address bits that are don't care. When all necessary bits are set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command. This method does not require V ID. See "Command Definitions" on page 43 for details on using the autoselect mode.
Table 5. S29CD016G Autoselect Codes (High Voltage Method)
Description Manufacturer ID: Spansion Autoselect Device Code Read Cycle 1 Read Cycle 2 CE# OE# WE# A18 to A11 X X X A10 A9 A8 A7 A6 A5 to A4 X X L A3 A2 A1 A0 DQ7 to DQ0 0001h 007Eh 0036h 0000h Ordering Option 00 0001h Ordering Option 01 0000h (unprotected) 0001h (protected)
L L L
L L L
H H H
X X X
VID VID VID
X X X
X L L
L L L
L L H
L L H
L L H
L H L
Read Cycle 3
L
L
H
X
X
VID
X
L
L
L
H
H
H
H
PPB Protection Status
L
L
H
SA
X
VID
X
L
L
L
L
L
H
L
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don't care. Note: The autoselect codes may also be accessed in-system via command sequences. See Tables 18 and 20.
Asynchronous Read Operation (Non-Burst)
The device includes two control functions which must be satisfied in order to obtain data at the outputs. CE# is the power control and should be used for device selection. OE# is the output control and should be used to gate data to the output pins if the device is selected. The device is power-up in an asynchronous read mode. In the asynchronous mode the device includes two control functions which must be satisfied in order to obtain data at the outputs. CE# is the power control and should be used for device selection. OE# is the output control and should be used to gate data to the output pins if the device is selected. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from the stable addresses and stable CE# to valid data at the output pins. The output enable access time is the delay from the falling edge of OE# to valid data at the output pins (assuming the addresses are stable for at least tACC-tOE time).
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CE# CLK ADV# Addresses Data OE# WE# IND/WAIT#
VIH Float Float VOH Address 0 Address 1 Address 2 Address 3
D0
D1
D2
D3
D3
Note: Operation is shown for the 32-bit data bus.
Figure 1.
Asynchronous Read Operation
Synchronous (Burst) Read Operation
The device is capable of performing burst read operations to improve total system data throughput. The 2, 4, and 8 double word accesses are configurable as linear burst accesses. All burst operations provide wrap around linear burst accesses. Additional options for all burst modes include initial access delay configurations (2-16 CLKs) Device configuration for burst mode operation is accomplished by writing the Configuration Register with the desired burst configuration information. Once the Configuration Register is written to enable burst mode operation, all subsequent reads from the array are returned using the burst mode protocols. Like the main memory access, the SecSi Sector memory is accessed with the same burst or asynchronous timing as defined in the Configuration Register. However, the user must recognize burst operations past the 256 byte SecSi boundary returns invalid data. Burst read operations occur only to the main flash memory arrays. The Configuration Register and protection bits are treated as single cycle reads, even when burst mode is enabled. Read operations to these locations results in the data remaining valid while OE# is at VIL, regardless of the number of CLK cycles applied to the device.
Linear Burst Read Operations
Linear burst read mode reads either 2, 4, or 8 double words (1 double word = 32 bits). (See Table 6 on page 21 for all valid burst output sequences). The IND/ WAIT# pin transitions active (VIL) during the last transfer of data during a linear burst read before a wrap around, indicating that the system should initiate another ADV# to start the next burst access. If the system continues to clock the device, the next access wraps around to the starting address of the previous burst access. The IND/WAIT# signal remains inactive (floating) when not active. See Table 6 on page 21 for a complete 32-bit data bus interface order.
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Table 6. 32- Bit Linear and Burst Data Order
Data Transfer Sequence (Independent of the WORD# pin) Two Linear Data Transfers Output Data Sequence (Initial Access Address) 0-1 (A0 = 0) 1-0 (A0 = 1) 0-1-2-3 (A1-A0 = 00) Four Linear Data Transfers 1-2-3-0 (A1-A0 = 01) 2-3-0-1 (A1-A0 = 10) 3-0-1-2 (A1-A0 = 11) 0-1-2-3-4-5-6-7 (A2-A0 = 000) 1-2-3-4-5-6-7-0 (A2-A0 = 001) 2-3-4-5-6-7-0-1 (A2-A0 = 010) Eight Linear Data Transfers 3-4-5-6-7-0-1-2 (A2-A0 = 011) 4-5-6-7-0-1-2-3 (A2-A0 = 100) 5-6-7-0-1-2-3-4 (A2-A0 = 101) 6-7-0-1-2-3-4-5 (A2-A0 = 110) 7-0-1-2-3-4-5-6 (A2-A0 = 111)
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CE# Control in Linear Mode
The CE# (Chip Enable) pin enables the device during read mode operations. CE# must meet the required burst read setup times for burst cycle initiation. If CE# is taken to VIH at any time during the burst linear or burst cycle, the device immediately exits the burst sequence and floats the DQ bus and IND/WAIT# signal. Restarting a burst cycle is accomplished by taking CE# and ADV# to VIL.
ADV# Control In Linear Mode
The ADV# (Address Valid) pin is used to initiate a linear burst cycle at the clock edge when CE# and ADV# are at VIL and the device is configured for either linear burst mode operation. A burst access is initiated and the address is latched on the first rising CLK edge when ADV# is active or upon a rising ADV# edge, whichever occurs first. If the ADV# signal is taken to VIL prior to the end of a linear burst sequence, the previous address is discarded and subsequent burst transfers are invalid until ADV# transitions to VIH before a clock edge, which initiates a new burst sequence.
RESET# Control in Linear Mode
The RESET# pin immediately halts the linear burst access when taken to VIL. The DQ data bus and IND/WAIT# signal float. Additionally, the Configuration Register contents are reset back to the default condition where the device is placed in asynchronous access mode.
OE# Control in Linear Mode
The OE# (Output Enable) pin is used to enable the linear burst data on the DQ data bus and the IND/WAIT# pin. De-asserting the OE# pin to VIH during a burst operation floats the data bus and the IND/WAIT# pin. However, the device continues to operate internally as if the burst sequence continues until the linear burst is complete. The OE# pin does not halt the burst sequence, this is accomplished by either taking CE# to VIH or re-issuing a new ADV# pulse. The DQ bus and IND/WAIT# signal remain in the float state until OE# is taken to VIL.
IND/WAIT# Operation in Linear Mode
The IND/WAIT#, or End of Burst Indicator signal (when in linear modes), informs the system that the last address of a burst sequence is on the DQ data bus. For example, with a 2-double-word linear burst, the IND/WAIT# signal transitions active on the second access. If the same scenario is used, the IND/WAIT# signal has the same delay and setup timing as the DQ pins. Also, the IND/WAIT# signal is controlled by the OE# signal. If OE# is at VIH, the IND/WAIT# signal floats and is not driven. If OE# is at VIL, the IND/WAIT# signal is driven at VIH until it transitions to VIL indicating the end of burst sequence. The IND/WAIT# signal timing and duration is (See"Configuration Register" on page 24 for more information). Table 7 lists the valid combinations of the Configuration Register bits that impact the IND/WAIT# timing.
Table 7.
DOC 0 0 WC 0 1 CC 1 1
Valid Configuration Register Bit Definition for IND/WAIT#
Definition
IND/WAIT# = VIL for 1-CLK cycle, Active on last transfer, Driven on rising CLD edge IND/WAIT# = VIL for 1-CLK cycle, Active on second to last transfer, Driven on rising CLK edge
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VIH
CE#
VIL
CLK
3 Clock Delay
ADV# Addresses Data
Address 1
Address 1 Latched
Invalid
D1
D2
D3
D0
OE#
IND/WAIT#
Note: Operation is shown for the 32-bit data bus. Figure shown with 3-CLK initial access delay configuration, linear address, 4-double-word burst, output on rising CLK edge, data hold for 1-CLK, IND/ WAIT# asserted on the last transfer before wrap-around
Figure 2.
End of Burst Indicator (IND/WAIT#) Timing for Linear 4-Double-Word Burst Operation Burst Access Timing Control
In addition to the IND/WAIT# signal control, burst controls exist in the Control Register for initial access delay, delivery of data on the CLK edge, and the length of time data is held.
Initial Burst Access Delay Control
The device contains options for initial access delay of a burst access. The initial access delay has no effect on asynchronous read operations. Burst Initial Access Delay is defined as the number of clock cycles that must elapse from the first valid clock edge after ADV# assertion (or the rising edge of ADV#) until the first valid CLK edge when the data is valid. The burst access is initiated and the address is latched on the first rising CLK edge when ADV# is active or upon a rising ADV# edge, whichever comes first. (Table 8 shows the initial access delay configurations.)
Table 8. Burst Initial Access Delay (Sheet 1 of 2)
Initial Burst Access (CLK cycles) CR13 0 0 0 0 CR12 0 0 0 0 CR11 0 0 1 1 CR10 0 1 0 1 2 3 4 5
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Table 8.
Burst Initial Access Delay (Sheet 2 of 2)
Initial Burst Access (CLK cycles)
CR13 0 0 0 0
CR12 1 1 1 1
CR11 0 0 1 1
CR10 0 1 0 1 6 7 8 9
1st CLK
2nd CLK
3rd CLK
4th CLK
5th CLK
CLK ADV# Addresses DQ31-DQ03 DQ31-DQ04 DQ31-DQ05
Valid Address
Address 1 Latched
Three CLK Delay Four CLK Delay
D0
D1 D0
D2 D1 D0
D3 D2 D1
D4 D3 D2
Five CLK Delay
Figure 3.
Notes:
Burst Access Timing
1. Burst access starts with a rising CLK edge and when ADV# is active. 2. Configurations register 6 must be always set to 1 (CR6 = 1). Burst starts and data outputs on the rising CLK edge. 3. CR [13-10] = 0001 or three clock cycles 4. CR [13-10] = 0010 or four clock cycles 5. CR [13-10] = 0011 or five clock cycles
Burst CLK Edge Data Delivery
The device is capable of delivering data on either the rising or falling edge of CLK. To deliver data on the rising edge of CLK, bit 6 in the Control Register (CR6) is set to 1. The default configuration is set to the rising edge.
Burst Data Hold Control
The device is capable of holding data for one CLKs. The default configuration is to hold data for one CLK and is the only valid state.
Asserting RESET# During A Burst Access
If RESET# is asserted low during a burst access, the burst access is immediately terminated and the device defaults back to asynchronous read mode. Refer to "RESET#: Hardware Reset Pin" on page 18 for more information on the RESET# function.
Configuration Register
The device contains a Configuration Register for configuring read accesses. The Configuration Register is accessed by the Configuration Register Read and the Configuration Register Write commands. The Configuration Register does not oc-
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cupy any addressable memory location, but rather, is accessed by the Configuration Register commands. The Configuration Register is readable any time, however, writing the Configuration Register is restricted to times when the Embedded AlgorithmTM is not active. If the user attempts to write the Configuration Register while the Embedded AlgorithmTM is active, the write operation is ignored and the contents of the Configuration Register remain unchanged. The Configuration Register is a 16 bit data field which is accessed by DQ15-DQ0. During a read operation, DQ31-DQ16 returns all zeroes. Table 9 shows the Configuration Register. Also, Configuration Register reads operate the same as Autoselect command reads. When the command is issued, the bank address is latched along with the command. Reads operations to the bank that was specified during the Configuration Register read command return Configuration Register contents. Read operations to the other bank return flash memory data. Either bank address is permitted when writing the Configuration Register read command.
Table 9.
CR15 RM CR14 ASD
Configuration Register Definitions (Sheet 1 of 2)
CR12 IAD2 CR11 IAD1 CR10 IAD0 CR9 DOC CR8 WC
CR13 IAD3
CR7 BS
CR6 CC
CR5 Reserved
CR4 Reserved
CR3 Reserved
CR2 BL2
CR1 BL1
CR0 BL0
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Table 9.
Configuration Register CR15 = Read Mode (RM) 0 = Synchronous Burst Reads Enabled
Configuration Register Definitions (Sheet 2 of 2)
1 = Asynchronous Reads Enabled (Default) CR14 = Automatic Sleep Mode Disable 0 = Automatic Sleep Mode ON (Default) 1 = Automatic Sleep Mode OFF CR13-CR10 = Initial Burst Access Delay Configuration (IAD3-IAD0) Speed Options OP, OM, OJ: 0000 = 2 CLK cycle initial burst access delay 0001 = 3 CLK cycle initial burst access delay 0010 = 4 CLK cycle initial burst access delay 0011 = 5 CLK cycle initial burst access delay 0100 = 6 CLK cycle initial burst access delay 0101 = 7 CLK cycle initial burst access delay 0110 = 8 CLK cycle initial burst access delay 0111 = 9 CLK cycle initial burst access delay--Default CR9 = Data Output Configuration (DOC) 0 = Hold Data for 1-CLK cycle--Default 1 = Reserved CR8 = IND/WAIT# Configuration (WC) 0 = IND/WAIT# Asserted During Delay--Default 1 = IND/WAIT# Asserted One Data Cycle Before Delay CR7 = Burst Sequence (BS) 0 = Reserved 1 = Linear Burst Order--Default CR6 = Clock Configuration (CC) 0 = Reserved 1 = Burst Starts and Data Output on Rising Clock Edge--Default CR5-CR3 = Reserved For Future Enhancements (R) These bits are reserved for future use. Set these bits to "0." CR2-CR0 = Burst Length (BL2-BL0) 000 = Reserved, burst accesses disabled (asynchronous reads only) 001 = 64 bit (2-double-word) Burst Data Transfer - x32 Linear 010 = 128 bit (4-double-word) Burst Data Transfer - x32 Linear 011 = 256 bit (8-double-word) Burst Data Transfer - x32 Linear (device default) 100 = Reserved, burst accesses disabled (asynchronous reads only) 101 = Reserved, burst accesses disabled (asynchronous reads only) 110 = Reserved, burst accesses disabled (asynchronous reads only) 111 = Reserved
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Table 10. Configuration Register After Device Reset
CR15 RM 1 CR14 ASD 0 CR13 IAD3 0 CR12 IAD2 1 CR11 IAD1 1 CR10 IAD0 1 CR9 DOC 0 CR8 WC 0
CR7 BS 1
CR6 CC 1
CR5 Reserve 0
CR4 Reserve 0
CR3 Reserve 0
CR2 BL2 1
CR1 BL1 0
CR0 BL0 0
Initial Access Delay Configuration
The frequency configuration informs the device of the number of clocks that must elapse after ADV# is driven active before data is available. This value is determined by the input clock frequency.
Sector Protection
The device features several levels of sector protection, which can disable both the program and erase operations in certain sectors or sector groups.
Sector and Sector Groups
The distinction between sectors and sector groups is fundamental to sector protection. Sector are individual sectors that can be individually sector protected/ unprotected. These are the outermost 4 Kword boot sectors, that is, SA0 to SA7 and SA38 to SA45. See Table 12 on page 34 and Table 13 on page 36. Sector groups are a collection of three or four adjacent 32 kword sectors. For example, sector group SG8 is comprised of sector SA8 to SA10. When any sector in a sector group is protected/unprotected, every sector in that group is protection/ unprotected. See Table 12 on page 34 and Table 13 on page 36.
Persistent Sector Protection
A command sector protection method that replaces the old 12 V controlled protection method.
Password Sector Protection
A highly sophisticated protection method that requires a password before changes to certain sectors or sector groups are permitted.
WP# Hardware Protection
A write protect pin that can prevent program or erase to the two outermost 8 Kbytes sectors in the 75% bank. All parts default to operate in the Persistent Sector Protection mode. The customer must then choose if the Persistent or Password Protection method is most desirable. There are two one-time programmable non-volatile bits that define which sector protection method is used. If the customer decides to continue using the Persistent Sector Protection method, they must set the Persistent Sector Protection Mode Locking Bit. This permanently sets the part to operate only using Persistent Sector Protection. If the customer decides to use the password method, they must set the Password Mode Locking Bit. This permanently sets the part to operate only using password sector protection.
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It is important to remember that setting either the Persistent Sector Protection Mode Locking Bit or the Password Mode Locking Bit permanently selects the protection mode. It is not possible to switch between the two methods once a locking bit is set. It is important that one mode is explicitly selected when the device is first programmed, rather than relying on the default mode alone. This is so that it is not possible for a system program or virus to later set the Password Mode Locking Bit, which would cause an unexpected shift from the default Persistent Sector Protection Mode into the Password Protection Mode. The WP# Hardware Protection feature is always available, independent of the software managed protection method chosen.
Persistent Sector Protection
The Persistent Sector Protection method replaces the old 12 V controlled protection method while at the same time enhancing flexibility by providing three different sector protection states: Persistently Locked--A sector is protected and cannot be changed. Dynamically Locked--The sector is protected and can be changed by a simple command Unlocked--The sector is unprotected and can be changed by a simple command In order to achieve these states, three types of "bits" are going to be used:
Persistent Protection Bit (PPB)
A single Persistent (non-volatile) Protection Bit is assigned to a maximum of four sectors (see the sector address tables for specific sector protection groupings). All 8 Kbyte boot-block sectors have individual sector Persistent Protection Bits (PPBs) for greater flexibility. Each PPB is individually modifiable through the PPB Write Command. Note: If a PPB requires erasure, all of the sector PPBs must first be preprogrammed prior to PPB erasing. All PPBs erase in parallel, unlike programming where individual PPBs are programmable. It is the responsibility of the user to perform the preprogramming operation. Otherwise, an already erased sector PPBs includes the potential of being over-erased. There is no hardware mechanism to prevent sector PPBs over-erasure.
Persistent Protection Bit Lock (PPB Lock)
A global volatile bit. When set to "1", the PPBs cannot be changed. When cleared ("0"), the PPBs are changeable. There is only one PPB Lock bit per device. The PPB Lock is cleared after power-up or hardware reset. There is no command sequence to unlock the PPB Lock.
Dynamic Protection Bit (DYB)
A volatile protection bit is assigned for each sector. After power-up or hardware reset, the contents of all DYBs is "0". Each DYB is individually modifiable through the DYB Write Command. When the parts are first shipped, the PPBs are cleared, the DYBs are cleared, and PPB Lock is defaulted to power up in the cleared state - meaning the PPBs are changeable. When the device is first powered on the DYBs power up cleared (sectors not protected). The Protection State for each sector is determined by the logical OR of
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the PPB and the DYB related to that sector. For the sectors that have the PPBs cleared, the DYBs control whether or not the sector is protected or unprotected. By issuing the DYB Write command sequences, the DYBs are set or cleared, thus placing each sector in the protected or unprotected state. These are the so-called Dynamic Locked or Unlocked states. They are called dynamic states because it is very easy to switch back and forth between the protected and unprotected conditions. This allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. The DYBs maybe set or cleared as often as needed. The PPBs allow for a more static, and difficult to change, level of protection. The PPBs retain their state across power cycles because they are Non-Volatile. Individual PPBs are set with a command but must all be cleared as a group through a complex sequence of program and erasing commands. The PPBs are limited to 100 erase cycles. The PPB Lock bit adds an additional level of protection. Once all PPBs are programmed to the desired settings, the PPB Lock may be set to "1". Setting the PPB Lock disables all program and erase commands to the Non-Volatile PPBs. In effect, the PPB Lock Bit locks the PPBs into their current state. The only way to clear the PPB Lock is to go through a power cycle. System boot code can determine if any changes to the PPB are needed e.g. to allow new system code to be downloaded. If no changes are needed then the boot code can set the PPB Lock to disable any further changes to the PPBs during system operation. The WP# write protect pin adds a final level of hardware protection to the two outermost 8 Kbytes sectors in the 75% bank. When this pin is low it is not possible to change the contents of these two sectors. It is possible to have sectors that are persistently locked, and sectors that are left in the dynamic state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB Write command sequence is all that is necessary. The DYB write command for the dynamic sectors switch the DYBs to signify protected and unprotected, respectively. If there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock bit must be disabled by either putting the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings. Setting the PPB lock bit once again locks the PPBs, and the device operates normally again. Note: to achieve the best protection, it's recommended to execute the PPB lock bit set command early in the boot code, and protect the boot code by holding WP# = VIL.
Table 11. Sector Protection Schemes (Sheet 1 of 2)
DYB 0 0 0 1 1 PPB 0 0 1 0 1 PPB Lock 0 1 0 0 0 Protected--PPB and DYB are changeable Sector State Unprotected--PPB and DYB are changeable Unprotected--PPB not changeable, DYB is changeable
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Table 11. Sector Protection Schemes (Sheet 2 of 2)
DYB 0 1 1 PPB 1 0 1 PPB Lock 1 1 1 Protected--PPB not changeable, DYB is changeable Sector State
Table 11 contains all possible combinations of the DYB, PPB, and PPB lock relating to the status of the sector. In summary, if the PPB is set, and the PPB lock is set, the sector is protected and the protection can not be removed until the next power cycle clears the PPB lock. If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB then controls whether or not the sector is protected or unprotected. If the user attempts to program or erase a protected sector, the device ignores the command and returns to read mode. A program command to a protected sector enables status polling for approximately 1 s before the device returns to read mode without having modified the contents of the protected sector. An erase command to a protected sector enables status polling for approximately 50 s after which the device returns to read mode without having erased the protected sector. The programming of the DYB, PPB, and PPB lock for a given sector can be verified by writing a DYB/PPB/PPB lock verify command to the device.
Persistent Sector Protection Mode Locking Bit
Like the password mode locking bit, a Persistent Sector Protection mode locking bit exists to guarantee that the device remain in software sector protection. Once set, the Persistent Sector Protection locking bit prevents programming of the password protection mode locking bit. This guarantees that an unauthorized user could not place the device in password protection mode.
Password Protection Mode
The Password Sector Protection Mode method allows an even higher level of security than the Persistent Sector Protection Mode. There are two main differences between the Persistent Sector Protection and the Password Sector Protection Mode: When the device is first powered on, or comes out of a reset cycle, the PPB Lock bit set to the locked state, rather than cleared to the unlocked state. The only means to clear the PPB Lock bit is by writing a unique 64-bit Password to the device. The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method. A 64-bit password is the only additional tool utilized in this method. The password is stored in a one-time programmable (OTP) region of the flash memory. Once the Password Mode Locking Bit is set, the password is permanently set with no means to read, program, or erase it. The password is used to clear the PPB Lock bit. The Password Unlock command must be written to the flash, along with a password. The flash device internally compares the given password with the pre-programmed password. If they match, the PPB Lock bit is cleared, and the PPBs can be altered. If they do not match, the flash device does nothing. There is a built-in 2 s delay for each "password check." This delay is
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intended to thwart any efforts to run a program that tries all possible combinations in order to crack the password.
Password and Password Mode Locking Bit
In order to select the Password sector protection scheme, the customer must first program the password. One method of choosing a password would be to correlate it to the unique Electronic Serial Number (ESN) of the particular flash device. Another method could generate a database where all the passwords are stored, each of which correlates to a serial number on the device. Each ESN is different for every flash device; therefore each password should be different for every flash device. While programming in the password region, the customer may perform Password Verify operations. Once the desired password is programmed in, the customer must then set the Password Mode Locking Bit. This operation achieves two objectives: 1) It permanently sets the device to operate using the Password Protection Mode. It is not possible to reverse this function. 2) It also disables all further commands to the password region. All program, and read operations are ignored. Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors. The user must be sure that the Password Protection method is desired when setting the Password Mode Locking Bit. More importantly, the user must be sure that the password is correct when the Password Mode Locking Bit is set. Due to the fact that read operations are disabled, there is no means to verify what the password is afterwards. If the password is lost after setting the Password Mode Locking Bit, there is no way to clear the PPB Lock bit. The Password Mode Locking Bit, once set, prevents reading the 64-bit password on the DQ bus and further password programming. The Password Mode Locking Bit is not erasable. Once Password Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit is disabled from programming, guaranteeing that no changes to the protection scheme are allowed.
64-bit Password
The 64-bit Password is located in its own memory space and is accessible through the use of the Password Program and Verify commands (see "Password Verify Command" on page 53). The password function works in conjunction with the Password Mode Locking Bit, which when set, prevents the Password Verify command from reading the contents of the password on the pins of the device.
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Write Protect (WP#)
The device features a hardware protection option using a write protect pin that prevents programming or erasing, regardless of the state of the sector's Persistent or Dynamic Protection Bits. The WP# pin is associated with the two outermost 8Kbytes sectors in the 75% bank. The WP# pin has no effect on any other sector. When WP# is taken to VIL, programming and erase operations of the two outermost 8 Kbytes sectors in the 75% bank are disabled. By taking WP# back to VIH, the two outermost 8 Kbytes sectors are enabled for program and erase operations, depending upon the status of the individual sector Persistent or Dynamic Protection Bits. If either of the two outermost sectors Persistent or Dynamic Protection Bits are programmed, program or erase operations are inhibited. If the sector Persistent or Dynamic Protection Bits are both erased, the two sectors are available for programming or erasing as long as WP# remains at VIH. The user must hold the WP# pin at either VIH or VIL during the entire program or erase operation of the two outermost sectors in the 75% bank.
SecSiTM (Secured Silicon) Sector Protection
The SecSi Sector is a 256-byte flash memory area that is either programmable at the customer or by AMD at the request of the customer. The SecSi Sector Entry command enables the host system to address the SecSi Sector for programming or reading. The SecSi sector address range is 00000h-0003Fh for the ordering option 00 and 7FFC0h-7FFFFh for the ordering option 01. Address range 00040h-007FFh for ordering option 0 and 7F800h-7FFBFh for ordering option 01 return invalid data when addressed with the SecSi Sector enabled. The device allows Simultaneous Read/Write operation while the SecSi Sector is enabled. However, there are a number of restrictions associated with Simultaneous Read/Write operations and device operation when the SecSi Sector is enabled: 1) The SecSi Sector is not available for reading while the Password Unlock, any PPB program/erase operation, or Password programming are in progress. Reading to any location in the small (25%) sector returns the status of these operations until these operations have completed execution. 2) Writing the corresponding DYB associated with the overlaid bootblock sector results in the DYB NOT being updated. This is only accomplished when the SecSi sector is not enabled. 3) Reading the corresponding DYB associated with the overlaid bootblock sector results in reading invalid data when the PPB Lock/DYB Verify command is issued. This function is only accomplished when the SecSi Sector is not enabled. 4) All commands are available for execution when the SecSi Sector is enabled except the following list. Issuing the following commands while the SecSi Sector is enabled results in the command being ignored. All Unlock Bypass commands CFI Accelerated Program Program and Sector Erase Suspend Program and Sector Erase Resume 5) Executing the Sector Erase command is permitted when the SecSi Sector is enabled, however, there is no provision for erasing the SecSi Sector with the
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Sector Erase command, regardless of the protection status. The Sector Erase command erases all other sectors when the SecSi Sector is enabled. 6) Executing the Chip Erase command is permitted when the SecSi Sector is enabled. The Chip Erase command erases all sectors in the memory array except for sector 0 in top-bootblock configuration and sector 45 in bottombootblock configuration. The SecSi Sector is a one-time programmable memory area that cannot be erased. 7) Executing the SecSi Sector Entry command during program or erase suspend mode is allowed. The Sector Erase/Program Resume command is disabled while the SecSi sector is enabled, and the user cannot resume programming of the memory array until the Exit SecSi Sector command is written.
SecSi Sector Protection Bit
The SecSi Sector Protection Bit prevents programming of the SecSi Sector memory area. Once set, the SecSi Sector memory area contents are non-modifiable.
Persistent Protection Bit Lock
The Persistent Protection Bit (PPB) Lock is a volatile bit that reflects the state of the Password Mode Locking Bit after power-up reset. If the Password Mode Locking Bit is set, which indicates the device is in Password Protection Mode, the PPB Lock Bit is also set after a hardware reset (RESET# asserted) or a power-up reset. The ONLY means for clearing the PPB Lock Bit in Password Protection Mode is to issue the Password Unlock command. Successful execution of the Password Unlock command clears the PPB Lock Bit, allowing for sector PPBs modifications. Asserting RESET#, taking the device through a power-on reset, or issuing the PPB Lock Bit Set command sets the PPB Lock Bit back to a "1". If the Password Mode Locking Bit is not set, indicating Persistent Sector Protection Mode, the PPB Lock Bit is cleared after power-up or hardware reset. The PPB Lock Bit is set by issuing the PPB Lock Bit Set command. Once set the only means for clearing the PPB Lock Bit is by issuing a hardware or power-up reset. The Password Unlock command is ignored in Persistent Sector Protection Mode.
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes. In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal erase/program circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
Write Pulse "Glitch" Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#, or WE# do not initiate a write cycle.
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Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH, or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero (VIL) while OE# is a logical one (VIH).
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power-up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up.
VCC and VIO Power-up And Power-down Sequencing
The device imposes no restrictions on VCC and VIO power-up or power-down sequencing. Asserting RESET# to VIL is required during the entire VCC and VIO power sequence until the respective supplies reach their operating voltages. Once, VCC and VIO attain their respective operating voltages, de-assertion of RESET# to VIH is permitted.
Table 12.
Sector SA0 (Note 1) SA1 SA2 SA3 SA4 Bank 0 (Note 2) SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14
Sector Addresses for Ordering Option 00 (Sheet 1 of 2)
Sector Group SG0 SG1 SG2 SG3 SG4 SG5 SG6 SG7 x32 Address Range (A18:A0) 00000h-007FFh 00800h-00FFFh 01000h-017FFh 01800h-01FFFh 02000h-027FFh 02800h-02FFFh 03000h-037FFh 03800h-03FFFh 04000h-07FFFh SG8 08000h-0BFFFh 0C000h-0FFFFh 10000h-13FFFh SG9 14000h-17FFFh 18000h-1BFFFh 1C000h-1FFFFh Sector Size (KDwords) 2 2 2 2 2 2 2 2 16 16 16 16 16 16 16
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Table 12.
Sector SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 Bank 1 (Note 2) SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43
Sector Addresses for Ordering Option 00 (Sheet 2 of 2)
Sector Group x32 Address Range (A18:A0) 20000h-23FFFh SG10 24000h-27FFFh 28000h-2BFFFh 2C000h-2FFFFh 30000h-33FFFh SG11 34000h-37FFFh 38000h-3BFFFh 3C000h-3FFFFh 40000h-43FFFh SG12 44000h-47FFFh 48000h-4BFFFh 4C000h-4FFFFh 50000h-53FFFh SG13 54000h-57FFFh 58000h-5BFFFh 5C000h-5FFFFh 60000h-63FFFh SG14 64000h-67FFFh 68000h-6BFFFh 6C000h-6FFFFh 70000h-73FFFh SG15 74000h-77FFFh 78000h-7BFFFh SG16 SG17 SG18 SG19 SG20 SG21 SG22 SG23 7C000h-7C7FFh 7C800h-7CFFFh 7D000h-7D7FFh 7D800h-7DFFFh 7E000h-7E7FFh 7E800h-7EFFFh 7F000h-7F7FFh 7F800h-7FFFFh Sector Size (KDwords) 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 2 2 2 2 2 2 2 2
SA44 (Note 3) SA45 (Note 3)
1. SecSi Sector overlays this sector when enabled. 2. The bank address is determined by A18 and A17. BA = 00 for Bank 1 and BA = 01, 10, or 11 for Bank 2. 3. This sector includes the additional WP# pin sector protection feature.
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Table 13.
Sector
Sector Addresses for Ordering Option 01 (Sheet 1 of 2)
Sector Group SG0 SG1 SG2 SG3 SG4 SG5 SG6 SG7 x32 Address Range (A18:A0) 00000h-007FFh 00800h-00FFFh 01000h-017FFh 01800h-01FFFh 02000h-027FFh 02800h-02FFFh 03000h-037FFh 03800h-03FFFh 04000h-07FFFh SG8 08000h-0BFFFh 0C000h-0FFFFh 10000h-13FFFh SG9 14000h-17FFFh 18000h-1BFFFh 1C000h-1FFFFh 20000h-23FFFh SG10 24000h-27FFFh 28000h-2BFFFh 2C000h-2FFFFh 30000h-33FFFh SG11 34000h-37FFFh 38000h-3BFFFh 3C000h-3FFFFh 40000h-43FFFh SG12 44000h-47FFFh 48000h-4BFFFh 4C000h-4FFFFh 50000h-53FFFh SG13 54000h-57FFFh 58000h-5BFFFh 5C000h-5FFFFh Sector Size (KDwords) 2 2 2 2 2 2 2 2 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16
SA0 (Note 1) SA1 (Note 1) SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 Bank 0 (Note 2) SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30
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Table 13.
Sector SA31 SA32 SA33 SA34 SA35 Bank 1 (Note 2) SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44
Sector Addresses for Ordering Option 01 (Sheet 2 of 2)
Sector Group x32 Address Range (A18:A0) 60000h-63FFFh SG14 64000h-67FFFh 68000h-6BFFFh 6C000h-6FFFFh 70000h-73FFFh SG15 74000h-77FFFh 78000h-7BFFFh SG16 SG17 SG18 SG19 SG20 SG21 SG22 SG23 7C000h-7C7FFh 7C800h-7CFFFh 7D000h-7D7FFh 7D800h-7DFFFh 7E000h-7E7FFh 7E800h-7EFFFh 7F000h-7F7FFh 7F800h-7FFFFh Sector Size (KDwords) 16 16 16 16 16 16 16 2 2 2 2 2 2 2 2
SA45 (Note 3)
1. This sector includes the additional WP# pin sector protection feature. 2. The bank address is determined by A18 and A17. BA = 00, 01, or 10 for Bank 0 and BA = 11 for Bank 1. 3. SecSi Sector overlays this sector when enabled.
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Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 14 on page 38 to TTable 17 on page 41. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table 14 on page 38 to TTable 17 on page 41. The system must write the reset command to return the device to the autoselect mode. For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/products/nvd/ overview/cfi.html. Alternatively, contact a Spansion representative for copies of these documents.
Note: CFI cannot be read in synchronous mode.
Table 14.
Addresses 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h
CFI Query Identification String
Description
Query Unique ASCII string "QRY"
Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists)
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Table 15.
Addresses 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Data 0023h 0027h 0000h 0000h 0004h 0000h 0009h 0000h 0005h 0000h 0007h 0000h
CFI System Interface String
Description
VCC Min. (write/erase) DQ7-DQ4: volts, DQ3-DQ0: 100 millivolt VCC Max. (write/erase) DQ7-DQ4: volts, DQ3-DQ0: 100 millivolt VPP Min. voltage (00h = no VPP pin present) VPP Max. voltage (00h = no VPP pin present) Typical timeout per single word/doubleword program 2N s Typical timeout for Min. size buffer program 2N s (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max. timeout for word/doubleword program 2N times typical Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical (00h = not supported)
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Table 16.
Addresses 27h Data 0015h
Device Geometry Definition
Description
Device Size = 2N byte Flash Device Interface description (for complete description, please refer to CFI publication 100)
28h 29h
0003h 0000h
0000 = x8-only asynchronous interface 0001 = x16-only asynchronous interface 0002 = supports x8 and x16 via BYTE# with asynchronous interface 0003 = x 32-only asynchronous interface
2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch
0000h 0000h 0003h 0007h 0000h 0020h 0000h 001Dh 0000h 0000h 0001h 0007h 0000h 0020h 0000h 0000h 0000h 0000h 0000h
Max. number of byte in multi-byte program = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100)
Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100)
Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100)
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Table 17. CFI Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Addresses 40h 41h 42h 43h 44h Data 0050h 0052h 0049h 0031h 0033h Description Query-unique ASCII string "PRI" Major version number, ASCII (reflects modifications to the silicon) Minor version number, ASCII (reflects modifications to the CFI table) Address Sensitive Unlock (DQ1, DQ0) 00 = Required, 01 = Not Required 45h 0004h Silicon Revision Number (DQ5-DQ2 0000 = CS49 0001 = CS59 0010 = CS99 0011 = CS69 0100 = CS119 Erase Suspend (1 byte) 00 = Not Supported 01 = To Read Only 02 = To Read and Write Sector Protect (1 byte) 00 = Not Supported, X = Number of sectors in per group Temporary Sector Unprotect 00h = Not Supported, 01h = Supported Sector Protect/Unprotect scheme (1 byte) 01 =29F040 mode, 02 = 29F016 mode 03 = 29F400 mode, 04 = 29LV800 mode 05 = 29BDS640 mode (Software Command Locking) 06 = BDD160 mode (New Sector Protect) 07 = 29LV800 + PDL128 (New Sector Protect) mode Simultaneous Read/Write (1 byte) 00h = Not Supported, X = Number of sectors in all banks except Bank 1 Burst Mode Type 00h = Not Supported, 01h = Supported Page Mode Type 00h = Not Supported, 01h = 4 Word Page, 02h = 8 Word Page ACC (Acceleration) Supply Minimum 00h = Not Supported (DQ7-DQ4: volt in hex, DQ3-DQ0: 100 mV in BCD) ACC (Acceleration) Supply Maximum 00h = Not Supported, (DQ7-DQ4: volt in hex, DQ3-DQ0: 100 mV in BCD)
46h
0002h
47h 48h
0001h 0000h
49h
0006h
4Ah
001Fh
4Bh 4Ch
0001h 0000h
4Dh
00B5h
4Eh
00C5h
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Table 17. CFI Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Addresses Data Description Top/Bottom Boot Sector Flag (1 byte) 00h = Uniform device, no WP# control, 01h = 8 x 8 Kb sectors at top and bottom with WP# control 02h = Bottom boot device 03h = Top boot device 04h = Uniform, Bottom WP# Protect 05h = Uniform, Top WP# Protect If the number of erase block regions = 1, then ignore this field Program Suspend 00 = Not Supported 01 = Supported Write Buffer Size 2(N+1) word(s) Bank Organization (1 byte) 00 = If data at 4Ah is zero XX = Number of banks Bank 1 Region Information (1 byte) XX = Number of Sectors in Bank 1 Bank 2 Region Information (1 byte) XX = Number of Sectors in Bank 2 Bank 3 Region Information (1 byte) XX = Number of Sectors in Bank 3 Bank 4 Region Information (1 byte) XX = Number of Sectors in Bank 4
4Fh
0001h
50h
0001h
51h
0000h
57h
0002h
58h 59h 5Ah 5Bh
000Fh 001Fh 0000h 0000h
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Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations. Tables 8-9 define the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to "AC Characteristics" on page 70 for timing diagrams.
Reading Array Data in Non-burst Mode
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See "Sector Erase and Program Suspend Command" on page 49 for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See also "Asynchronous Read Operation (Non-Burst)" on page 19 for more information. See "Sector Erase and Program Resume Command" on page 51 for more information on this mode.
Reading Array Data in Burst Mode
The device is capable of very fast Burst mode read operations. The configuration register sets the read configuration, burst order, frequency configuration, and burst length. Upon power on, the device defaults to the asynchronous mode. In this mode, CLK, and ADV# are ignored. The device operates like a conventional Flash device. Data is available tACC/tCE nanoseconds after address becomes stable, CE# become asserted. The device enters the burst mode by enabling synchronous burst reads in the configuration register. The device exits burst mode by disabling synchronous burst reads in the configuration register. (See "Command Definitions" on page 43). The RESET# command does not terminate the Burst mode. System reset (power on reset) terminates the Burst mode. The device contains the regular control pins, i.e. Chip Enable (CE#), Write Enable (WE#), and Output Enable (OE#) to control normal read and write operations. Moreover, three additional control pins were added to allow easy interface with minimal glue logic to a wide range of microprocessors / microcontrollers for high performance Burst read capability. These additional pins are Address Valid (ADV#) and Clock (CLK). CE#, OE#, and WE# are asynchronous (relative to CLK). The Burst mode read operation is a synchronous operation tied to the edge of the clock. The microprocessor / microcontroller supplies only the initial address, all subsequent addresses are automatically generated by the device with a timing defined by the Configuration Register definition. The Burst read cycle consists of an address phase and a corresponding data phase.
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During the address phase, the Address Valid (ADV#) pin is asserted (taken Low) for one clock period. Together with the edge of the CLK, the starting burst address is loaded into the internal Burst Address Counter. The internal Burst Address Counter can be configured to either the Linear modes (See "Initial Access Delay Configuration" on page 27). During the data phase, the first burst data is available after the initial access time delay defined in the Configuration Register. For subsequent burst data, every rising (or falling) edge of the CLK triggers the output data with the burst output delay and sequence defined in the Configuration Register. Tables 8-9 show all the commands executed by the device. The device automatically powers up in the read/reset state. It is not necessary to issue a read/reset command after power-up or hardware reset.
Read/Reset Command
After power-up or hardware reset, the device automatically enter the read state. It is not necessary to issue the reset command after power-up or hardware reset. Standard microprocessor cycles retrieve array data, however, after power-up, only asynchronous accesses are permitted since the Configuration Register is at its reset state with burst accesses disabled. The Reset command is executed when the user needs to exit any of the other user command sequences (such as autoselect, program, chip erase, etc.) to return to reading array data. There is no latency between executing the Reset command and reading array data. The Reset command does not disable the SecSi sector if it is enabled. This function is only accomplished by issuing the SecSi Sector Exit command.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access the signature codes by raising A9 to VID. However, multiplexing high voltage onto the address lines is not generally desired system design practice. The device contains an Autoselect Command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register. The bank address (BA) is latched during the autoselect command sequence write operation to distinguish which bank the Autoselect command references. Reading the other bank after the Autoselect command is written results in reading array data from the other bank and the specified address. Following the command write, a read cycle from address (BA)XX00h retrieves the manufacturer code of (BA)XX01h. Three sequential read cycles at addresses (BA) XX01h, (BA) XX0Eh, and (BA) XX0Fh read the three-byte device ID (see Table 8). (The Autoselect Command requires the user to execute the Read/Reset command to return the device back to reading the array contents.)
Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further con-
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trols or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Tables 8 and 9 show the address and data requirements for the program command sequence. During the Embedded Program algorithm, the system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. (See "Write Operation Status" on page 60 for information on these status bits.) When the Embedded Program algorithm is complete, the device returns to reading array data and addresses are no longer latched. Note that an address change is required to begin read valid array data. Except for Program Suspend, any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The command sequence should be reinitiated once that bank returns to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set DQ5 to "1," or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read shows that the data is still "0". Only erase operations can convert a "0" to a "1".
Accelerated Program Command
The Accelerated Chip Program mode is designed to improve the Word or Double Word programming speed. Improving the programming speed is accomplished by using the ACC pin to supply both the wordline voltage and the bitline current instead of using the VPP pump and drain pump, which is limited to 2.5 mA. Because the external ACC pin is capable of supplying significantly large amounts of current compared to the drain pump, all 32 bits are available for programming with a single programming pulse. This is an enormous improvement over the standard 5bit programming. If the user is able to supply an external power supply and connect it to the ACC pin, significant time savings are realized. In order to enter the Accelerated Program mode, the ACC pin must first be taken to VHH (12 V 0.5 V) and followed by the one-cycle command with the program address and data to follow. The Accelerated Chip Program command is only executed when the device is in Unlock Bypass mode and during normal read/reset operating mode. In this mode, the write protection function is bypassed unless the PPB Lock Bit = 1. The Accelerated Program command is not permitted if the SecSi sector is enabled.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required
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in the standard program command sequence, resulting in faster total programming time. Figure 19, on page 58 and Figure 20, on page 59 show the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h; the second cycle the data 00h. Addresses are don't care for both cycles. The device then returns to reading array data. Figure 4 illustrates the algorithm for the program operation. See Table 29 on page 85 for parameters, and Figure 21, on page 78 and Figure 22, on page 79 for timing diagrams.
START
Write Program Command Sequence
Embedded Program algorithm in progress
Data Poll from System
Verify Data?
No
Yes No
Increment Address
Last Address?
Yes Programming Completed
Note: See Tables 8 and 9 for program command sequence.
Figure 4. Program Operation Unlock Bypass Entry Command
The Unlock Bypass command, once issued, is used to bypass the "unlock" sequence for program, chip erase, and CFI commands. This feature permits slow PROM programmers to significantly improve programming/erase throughput since the command sequence often requires microseconds to execute a single write operation. Therefore, once the Unlock Bypass command is issued, only the two-cycle program and erase bypass commands are required. The Unlock Bypass Command is ignored if the SecSi sector is enabled. To return back to normal operation, the Unlock Bypass Reset Command must be issued.
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The following four sections describe the commands that may be executed within the unlock bypass mode.
Unlock Bypass Program Command
The Unlock Bypass Program command is a two-cycle command that consists of the actual program command (A0h) and the program address/data combination. This command does not require the two-cycle "unlock" sequence since the Unlock Bypass command was previously issued. As with the standard program command, multiple Unlock Bypass Program commands can be issued once the Unlock Bypass command is issued. To return back to standard read operations, the Unlock Bypass Reset command must be issued. The Unlock Bypass Program Command is ignored if the SecSi sector is enabled.
Unlock Bypass Chip Erase Command
The Unlock Bypass Chip Erase command is a 2-cycle command that consists of the erase setup command (80h) and the actual chip erase command (10h). This command does not require the two-cycle "unlock" sequence since the Unlock Bypass command was previously issued. Unlike the standard erase command, there is no Unlock Bypass Erase Suspend or Erase Resume commands. To return back to standard read operations, the Unlock Bypass Reset command must be issued. The Unlock Bypass Program Command is ignored if the SecSi sector is enabled.
Unlock Bypass CFI Command
The Unlock Bypass CFI command is available for PROM programmers and target systems to read the CFI codes while in Unlock Bypass mode. See "Common Flash Interface (CFI) Command" on page 51 for specific CFI codes. To return back to standard read operations, the Unlock Bypass Reset command must be issued. The Unlock Bypass Program Command is ignored if the SecSi sector is enabled.
Unlock Bypass Reset Command
The Unlock Bypass Reset command places the device in standard read/reset operating mode. Once executed, normal read operations and user command sequences are available for execution. The Unlock Bypass Program Command is ignored if the SecSi sector is enabled.
Chip Erase Command
The Chip Erase command is used to erase the entire flash memory contents of the chip by issuing a single command. Chip erase is a six-bus cycle operation. There are two "unlock" write cycles, followed by writing the erase "set up" command. Two more "unlock" write cycles are followed by the chip erase command. Chip erase does not erase protected sectors. The chip erase operation initiates the Embedded Erase algorithm, which automatically preprograms and verifies the entire memory to an all zero pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Note that a hardware reset immediately terminates
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the programming operation. The command sequence should be reinitiated once that bank returns to reading array data, to ensure data integrity. The Embedded Erase algorithm erase begins on the rising edge of the last WE# or CE# pulse (whichever occurs first) in the command sequence. The status of the erase operation is determined three ways: Data# polling of the DQ7 pin (see "DQ7: Data# Polling" on page 60) Checking the status of the toggle bit DQ6 (see "DQ6: Toggle Bit I" on page 62) Checking the status of the RY/BY# pin (see "RY/BY#: Ready/Busy#" on page 62) Once erasure starts, only the Erase Suspend command is valid. All other commands are ignored. When the Embedded Erase algorithm is complete, the device returns to reading array data, and addresses are no longer latched. Note that an address change is required to begin read valid array data. Figure 5, on page 49 illustrates the Embedded Erase Algorithm. See Table 27 on page 77 for parameters, and Figure 21, on page 78 and Figure 22, on page 79 for timing diagrams.
Sector Erase Command
The Sector Erase command is used to erase individual sectors or the entire flash memory contents. Sector erase is a six-bus cycle operation. There are two "unlock" write cycles, followed by writing the erase "set up" command. Two more "unlock" write cycles are then followed by the erase command (30h). The sector address (any address location within the desired sector) is latched on the falling edge of WE# or CE# (whichever occurs last) while the command (30h) is latched on the rising edge of WE# or CE# (whichever occurs first). Specifying multiple sectors for erase is accomplished by writing the six bus cycle operation, as described above, and then following it by additional writes of only the last cycle of the Sector Erase command to addresses or other sectors to be erased. The time between Sector Erase command writes must be less than 80 s, otherwise the command is rejected. It is recommended that processor interrupts be disabled during this time to guarantee this critical timing condition. The interrupts can be re-enabled after the last Sector Erase command is written. A timeout of 80 s from the rising edge of the last WE# (or CE#) initiates the execution of the Sector Erase command(s). If another falling edge of the WE# (or CE#) occurs within the 80 s time-out window, the timer is reset. Once the 80 s window times out and erasure starts, only the Erase Suspend command is recognized (see "Sector Erase and Program Suspend Command" on page 49 and "Sector Erase and Program Resume Command" on page 51). If that occurs, the sector erase command sequence should be reinitiated once that bank returns to reading array data, to ensure data integrity. Loading the sector erase registers may be done in any sequence and with any number of sectors. Sector erase does not require the user to program the device prior to erase. The device automatically preprograms all memory locations, within sectors to be erased, prior to electrical erase. When erasing a sector or sectors, the remaining unselected sectors or the write protected sectors are unaffected. The system is not required to provide any controls or timings during sector erase operations. The Erase Suspend and Erase Resume commands may be written as often as required during a sector erase operation.
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Automatic sector erase operations begin on the rising edge of the WE# or CE# pulse of the last sector erase command issued, and once the 80 s time-out window expires. The status of the sector erase operation is determined three ways: Data# polling of the DQ7 pin Checking the status of the toggle bit DQ6 Checking the status of the RY/BY# pin Further status of device activity during the sector erase operation is determined using toggle bit DQ2 (refer to "DQ2: Toggle Bit II" on page 63). When the Embedded Erase algorithm is complete, the device returns to reading array data, and addresses are no longer latched. Note that an address change is required to begin read valid array data. Figure 5 illustrates the EmbeddedTM Erase Algorithm, using a typical command sequence and bus operation. Refer to Table 29 on page 85 for parameters, and Figure 21, on page 78 and Figure 22, on page 79 for timing diagrams.
START
Write Erase Command Sequence
Data Poll from System
No
Embedded Erase algorithm in progress
Data = FFh?
Yes Erasure Completed
Notes:
1. See Table 27 on page 77 and Table 28 on page 83 for erase command sequence. 2. See "DQ3: Sector Erase Timer" on page 65r for more information.
Figure 5. Erase Operation
Sector Erase and Program Suspend Command
The Sector Erase and Program Suspend command allows the user to interrupt a Sector Erase or Program operation and perform data read or programs in a sector that is not being erased or to the sector where a programming operation was initiated. This command is applicable only during the Sector Erase and Programming operation, which includes the time-out period for Sector Erase.
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Sector Erase and Program Suspend Operation Mechanics
The Sector Erase and Program Suspend command is ignored if written during the execution of the Chip Erase operation or Embedded Program Algorithm (but resets the chip if written improperly during the command sequences). Writing the Sector Erase and Program command during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Once in Erase Suspend, the device is available for reading (note that in the Erase Suspend mode, the Reset command is not required for read operations and is ignored) or program operations in sectors not being erased. Any other command written during the Erase Suspend mode is ignored, except for the Sector Erase and Program Resume command. Writing the Erase and Program Resume command resumes the sector erase operation. The bank address of the erase suspended bank is required when writing this command If the Sector Erase and Program Suspend command is written during a programming operation, the device suspends programming operations and allows only read operations in sectors not selected for programming. Further nesting of either erase or programming operations is not permitted. Table 18 summarizes permissible operations during Erase and Program Suspend. (A busy sector is one that is selected for programming or erasure.)
Table 18. Allowed Operations During Erase/Program Suspend
Sector Busy Sector Non-busy sectors Program Suspend Program Resume Read Only Erase Suspend Erase Resume Read or Program
When the Sector Erase and Program Suspend command is written during a Sector Erase operation, the chip takes between 0.1 s and 20 s to actually suspend the operation and go into the erase suspended read mode (pseudo-read mode), at which time the user can read or program from a sector that is not erase suspended. Reading data in this mode is the same as reading from the standard read mode, except that the data must be read from sectors that have not been erase suspended. Polling DQ6 on two immediately consecutive reads from a given address provides the system with the ability to determine if the device is in Erase or Program Suspend. Before the device enters Erase or Program Suspend, the DQ6 pin toggles between two immediately consecutive reads from the same address. After the device enters Erase suspend, DQ6 stops toggling between two immediately consecutive reads to the same address. During the Sector Erase operation and also in Erase suspend mode, two immediately consecutive readings from the erasesuspended sector causes DQ2 to toggle. DQ2 does not toggle if reading from a non-busy (non-erasing) sector (stored data is read). No bits are toggled during program suspend mode. Software must keep track of the fact that the device is in a suspended mode. After entering the erase-suspend-read mode, the system may read or program within any non-suspended sector: A read operation from the erase-suspended bank returns polling data up to 20 s after the erase suspend command is issued; read operations thereafter return array data. Read operations from the other bank return array data with no latency.
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A program operation while in the erase suspend mode is the same as programming in the regular program mode, except that the data must be programmed to a sector that is not erase suspended. Write operation status is obtained in the same manner as a normal program operation.
Sector Erase and Program Resume Command
The Sector Erase and Program Resume command (30h) resumes a Sector Erase or Program operation that was suspended. Any further writes of the Sector Erase and Program Resume command ignored. However, another Sector Erase and Program Suspend command can be written after the device resumes sector erase operations. Note that until a suspended program or erase operation resumes, the contents of that sector are unknown. The Sector Erase and Program Resume Command is ignored if the SecSi sector is enabled.
Configuration Register Read Command
The Configuration Register Read command is used to verify the contents of the Configuration Register. Execution of this command is only allowed while in user mode and is not available during Unlock Bypass mode or during Security mode. The Configuration Register Read command is preceded by the standard two-cycle "unlock" sequence, followed by the Configuration Register Read command (C6h), and finally followed by performing a read operation to the bank address specified when the C6h command was written. Reading the other bank results in reading the flash memory contents. The contents of the Configuration Register are place on DQ15-DQ0. The contents of DQ31-DQ16 are XXXXh and should be ignored. The user should execute the Read/Reset command to place the device back in standard user operation after executing the Configuration Register Read command. The Configuration Register Read Command is fully operational if the SecSi sector is enabled.
Configuration Register Write Command
The Configuration Register Write command is used to modify the contents of the Configuration Register. Execution of this command is only allowed while in user mode and is not available during Unlock Bypass mode or during Security mode. The Configuration Register Write command is preceded by the standard two-cycle "unlock" sequence, followed by the Configuration Register Write command (D0h), and finally followed by writing the contents of the Configuration Register to any address. The contents of the Configuration Register are place on DQ31-DQ0. The contents of DQ31-DQ16 are XXXXh and are ignored. Writing the Configuration Register while an Embedded AlgorithmTM or Erase Suspend modes are executing results in the contents of the Configuration Register not being updated. The Configuration Register Read Command is fully operational if the SecSi sector is enabled.
Common Flash Interface (CFI) Command
The Common Flash Interface (CFI) command provides device size, geometry, and capability information directly to the users system. Flash devices that support CFI, have a "Query Command" that returns information about the device to the system. The Query structure contents are read at the specific address locations following a single system write cycle where:
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A 98h query command code is written to 55h address location within the device's address space The device is initially in any valid read state, such as "Read Array" or "Read ID Data" Other device statistics may exist within a long sequence of commands or data input; such sequences must first be completed or terminated before writing of the 98H Query command, otherwise invalid Query data structure output may result. Note that for data bus bits greater than DQ7 (DQ31-DQ8), the valid Query access code contains all zeroes ("0"s) in the upper DQ bus locations. Thus, the 16-bit Query command code is 0098h and the 32-bit Query command code is 00000098h. To terminate the CFI operation, it is necessary to execute the Read/Reset command. The CFI command is not permitted if the SecSi sector is enabled and Simultaneous Read/Write operation is disabled once the command is entered. See "Common Flash Interface (CFI) Command" on page 51 for the specific CFI command codes.
SecSi Sector Entry Command
The SecSi Sector Entry command enables the SecSi (OTP) sector to overlay the 8 KB outermost sector in the small (25%) bank. The SecSi sector overlays 00000h-0003Fh for the top bootblock configuration and 7FFC0h-7FFFFh for the bottom bootblock configuration. Address range 00040h-007FFh for the top bootblock and 7F800h-7FFBFh return invalid data when addressed with the SecSi sector enabled. The following commands are permitted after issuing the SecSi Sector Entry command:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. Autoselect Password Program Password Verify Password Unlock Read/Reset Program Chip and Sector Erase SecSi Sector Protection Bit Program PPB Program All PPB Erase PPB Lock Bit Set DYB Write DYB/PPB/PPB Lock Bit Verify Security Reset Configuration Register Write Configuration Register Read
The following commands are unavailable when the SecSi sector is enabled. Issuing the following commands while the SecSi sector is enabled results in the command being ignored.
1. 2. 3. Unlock Bypass CFI Accelerated Program
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4. 5.
Program and Sector Erase Suspend Program and Sector Erase Resume
The SecSi Sector Entry command is allowed when the device is in either program or erase suspend modes. If the SecSi sector is enabled, the program or erase suspend command is ignored. This prevents resuming either programming or erasure on the SecSi sector if the overlayed sector was undergoing programming or erasure. The host system must ensure that the device resume any suspended program or erase operation after exiting the SecSi sector. Executing any of the PPB program/erase commands, or Password Unlock command results in the small bank (25% bank) returning the status of these operations while they are in progress, thus making the SecSi sector unavailable for reading. If the SecSi sector is enabled while the DYB command is issued, the DYB for the overlayed sector is NOT updated. Reading the DYB status using the PPB Lock Bit/DYBDYB verify command when the SecSi sector is enabled returns invalid data.
Password Program Command
The Password Program Command permits programming the password that is used as part of the hardware protection scheme. The actual password is 64-bits long. Depending upon the state of the WORD# pin, multiple Password Program Commands are required. For a x32 bit data bus, 2 Password Program commands are required. The user must enter the unlock cycle, password program command (38h) and the program address/data for each portion of the password when programming. There are no provisions for entering the 2-cycle unlock cycle, the password program command, and all the password data. There is no special addressing order required for programming the password. Also, when the password is undergoing programming, Simultaneous Read/Write operation is disabled. Read operations to any memory location returns the programming status. Once programming is complete, the user must issue a Read/Reset command to return the device to normal operation. Once the Password is written and verified, the Password Mode Locking Bit must be set in order to prevent verification. The Password Program Command is only capable of programming "0"s. Programming a "1" after a cell is programmed as a "0" results in a time-out by the Embedded Program AlgorithmTM with the cell remaining as a "0". The password is all F's when shipped from the factory. All 64-bit password combinations are valid as a password. Password Programming is permitted if the SecSi sector is enabled.
Password Verify Command
The Password Verify Command is used to verify the Password. The Password is verifiable only when the Password Mode Locking Bit is not programmed. If the Password Mode Locking Bit is programmed and the user attempts to verify the Password, the device always drives all F's onto the DQ data bus. The Password Verify command is permitted if the SecSi sector is enabled. Also, Simultaneous Read/Write operation is disabled when the Password Verify command is executed. Only the password is returned regardless of the bank address. The lower two address bits (A0:A-1) are valid during the Password Verify. Writing the Read/Reset command returns the device back to normal operation.
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Password Protection Mode Locking Bit Program Command
The Password Protection Mode Locking Bit Program Command programs the Password Protection Mode Locking Bit, which prevents further verifies or updates to the Password. Once programmed, the Password Protection Mode Locking Bit cannot be erased! If the Password Protection Mode Locking Bit is verified as program without margin, the Password Protection Mode Locking Bit Program command can be executed to improve the program margin. Once the Password Protection Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit program circuitry is disabled, thereby forcing the device to remain in the Password Protection mode. Exiting the Mode Locking Bit Program command is accomplished by writing the Read/Reset command. The Password Protection Mode Locking Bit Program command is permitted if the SecSi sector is enabled.
Persistent Sector Protection Mode Locking Bit Program Command
The Persistent Sector Protection Mode Locking Bit Program Command programs the Persistent Sector Protection Mode Locking Bit, which prevents the Password Mode Locking Bit from ever being programmed. If the Persistent Sector Protection Mode Locking Bit is verified as programmed without margin, the Persistent Sector Protection Mode Locking Bit Program Command should be reissued to improve program margin. By disabling the program circuitry of the Password Mode Locking Bit, the device is forced to remain in the Persistent Sector Protection mode of operation, once this bit is set. Exiting the Persistent Protection Mode Locking Bit Program command is accomplished by writing the Read/Reset command. The Persistent Sector Protection Mode Locking Bit Program command is permitted if the SecSi sector is enabled.
SecSi Sector Protection Bit Program Command
The SecSi Sector Protection Bit Program Command programs the SecSi Sector Protection Bit, which prevents the SecSi sector memory from being cleared. If the SecSi Sector Protection Bit is verified as programmed without margin, the SecSi Sector Protection Bit Program Command should be reissued to improve program margin. Exiting the VCC-level SecSi Sector Protection Bit Program Command is accomplished by writing the Read/Reset command. The SecSi Sector Protection Bit Program command is permitted if the SecSi sector is enabled.
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the PPB Lock bit if it is cleared either at reset or if the Password Unlock command was successfully executed. There is no PPB Lock Bit Clear command. Once the PPB Lock Bit is set, it cannot be cleared unless the device is taken through a power-on clear or the Password Unlock command is executed. Upon setting the PPB Lock Bit, the PPBs are latched into the DYBs. If the Password Mode Locking Bit is set, the PPB Lock Bit status is reflected as set, even after a power-on reset cycle. Exiting the PPB Lock Bit Set command is accomplished by writing the Read/Reset command. The PPB Lock Bit Set command is permitted if the SecSi sector is enabled.
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DYB Write Command
The DYB Write command is used to set or clear a DYB for a given sector. The high order address bits (A18-A11) are issued at the same time as the code 01h or 00h on DQ7-DQ0. All other DQ data bus pins are ignored during the data write cycle. The DYBs are modifiable at any time, regardless of the state of the PPB or PPB Lock Bit. The DYBs are cleared at power-up or hardware reset.Exiting the DYB Write command is accomplished by writing the Read/Reset command. The DYB Write command is permitted if the SecSi sector is enabled.
Password Unlock Command
The Password Unlock command is used to clear the PPB Lock Bit so that the PPBs can be unlocked for modification, thereby allowing the PPBs to become accessible for modification. The exact password must be entered in order for the unlocking function to occur. This command cannot be issued any faster than 2 s at a time to prevent a hacker from running through the all 64-bit combinations in an attempt to correctly match a password. If the command is issued before the 2 s execution window for each portion of the unlock, the command is ignored. The Password Unlock function is accomplished by writing Password Unlock command and data to the device to perform the clearing of the PPB Lock Bit. The password is 64 bits long, so the user must write the Password Unlock command 2 times for a x32 bit data bus. A0 is used to determine whether the 32 bit data quantity is used to match the upper 32 bits or lower 32 bits. Writing the Password Unlock command is address order specific. In other words, for the x32 data bus configuration, the lower 32 bits of the password are written first and then the upper 32 bits of the password are written. Writing out of sequence results in the Password Unlock not returning a match with the password and the PPB Lock Bit remains set. Once the Password Unlock command is entered, the RY/BY# pin goes LOW indicating that the device is busy. Also, reading the small bank (25% bank) results in the DQ6 pin toggling, indicating that the Password Unlock function is in progress. Reading the large bank (75% bank) returns actual array data. Approximately 1uSec is required for each portion of the unlock. Once the first portion of the password unlock completes (RY/BY# is not driven and DQ6 does not toggle when read), the Password Unlock command is issued again, only this time with the next part of the password. The second Password Unlock command is the final command before the PPB Lock Bit is cleared (assuming a valid password). As with the first Password Unlock command, the RY/BY# signal goes LOW and reading the device results in the DQ6 pin toggling on successive read operations until complete. It is the responsibility of the microprocessor to keep track of the number of Password Unlock commands (2 for x32 bus), the order, and when to read the PPB Lock bit to confirm successful password unlock The Password Unlock command is permitted if the SecSi sector is enabled.
PPB Program Command
The PPB Program command is used to program, or set, a given PPB. Each PPB is individually programmed (but is bulk erased with the other PPBs). The specific sector address (A18-A11) are written at the same time as the program command 60h with A6 = 0. If the PPB Lock Bit is set and the corresponding PPB is set for the sector, the PPB Program command does not execute and the command times out without programming the PPB.
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The host system must determine whether a PPB was fully programmed by noting the status of DQ0 in the sixth cycle of the PPB Program command. If DQ0 = 0, the entire six-cycle PPB Program command sequence must be reissued until DQ0 = 1.
All PPB Erase Command
The All PPB Erase command is used to erase all PPBs in bulk. There is no means for individually erasing a specific PPB. Unlike the PPB program, no specific sector address is required. However, when the PPB erase command is written (60h) and A6 = 1, all Sector PPBs are erased in parallel. If the PPB Lock Bit is set the ALL PPB Erase command does not execute and the command times out without erasing the PPBs. The host system must determine whether all PPB was fully erased by noting the status of DQ0 in the sixth cycle of the All PPB Erase command. If DQ0 = 1, the entire six-cycle All PPB Erase command sequence must be reissued until DQ0 = 1. It is the responsibility of the user to preprogram all PPBs prior to issuing the All PPB Erase command. If the user attempts to erase a cleared PPB, over-erasure may occur making it difficult to program the PPB at a later time. Also note that the total number of PPB program/erase cycles is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed. The All PPB Erase command is permitted if the SecSi sector is enabled.
DYB Write
The DYB Write command is used for setting the DYB, which is a volatile bit that is cleared at reset. There is one DYB per sector. If the PPB is set, the sector is protected regardless of the value of the DYB. If the PPB is cleared, setting the DYB to a 1 protects the sector from programs or erases. Since this is a volatile bit, removing power or resetting the device clears the DYBs. The bank address is latched when the command is written. The DYB Write command is permitted if the SecSi sector is enabled.
PPB Lock Bit Set
The PPB Lock Bit set command is used for setting the DYB, which is a volatile bit that is cleared at reset. There is one DYB per sector. If the PPB is set, the sector is protected regardless of the value of the DYB. If the PPB is cleared, setting the DYB to a 1 protects the sector from programs or erases. Since this is a volatile bit, removing power or resetting the device clears the DYBs. The bank address is latched when the command is written. The PPB Lock command is permitted if the SecSi sector is enabled.
DYB Status
The programming of the DYB for a given sector can be verified by writing a DYB status verify command to the device.
PPB Status
The programming of the PPB for a given sector can be verified by writing a PPB status verify command to the device.
PPB Lock Bit Status
The programming of the PPB Lock Bit for a given sector can be verified by writing a PPB Lock Bit status verify command to the device.
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Non-volatile Protection Bit Program And Erase Flow
The device uses a standard command sequence for programming or erasing the SecSi Sector Protection, Password Locking, Persistent Sector Protection Mode Locking, or Persistent Protection Bits. Unlike devices that have the Single High Voltage Sector Unprotect/Protect feature, the device has the standard two-cycle unlock followed by 60h, which places the device into non-volatile bit program or erase mode. Once the mode is entered, the specific non-volatile bit status is read on DQ0. 1 shows a typical flow for programming the non-volatile bit and 2 shows a typical flow for erasing the non-volatile bits. The SecSi Sector Protection, Password Locking, Persistent Sector Protection Mode Locking bits are not erasable after they are programmed. However, the PPBs are both erasable and programmable (depending upon device security). Unlike Single High Voltage Sector Protect/Unprotect, the A6 pin no longer functions as the program/erase selector nor the program/erase margin enable. Instead, this function is accomplished by issuing the specific command for either program (68h) or erase (60h). In asynchronous mode, the DQ6 toggle bit indicates whether the program or erase sequence is active. (In synchronous mode, ADV# indicates the status.) If the DQ6 toggle bit toggles with either OE# or CE#, the non-volatile bit program or erase operation is in progress. When DQ6 stops toggling, the value of the nonvolatile bit is available on DQ0.
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Table 19. Memory Array Command Definitions (x32 Mode)
Command (Notes) Read (5) Reset (6) Autoselect (7) Program Chip Erase Sector Erase Program/Erase Suspend (12) Program/Erase Resume (13) CFI Query (14, 15) Accelerated Program (16) Configuration Register Verify (15) Configuration Register Write (17) Unlock Bypass Entry (18) Unlock Bypass Program (18) Unlock Bypass Erase (18) Unlock Bypass CFI (14, 18) Unlock Bypass Reset (18) Manufacturer ID Device ID (11) Cycles Bus Cycles (Notes 1-4) First Addr RA XXX 555 555 555 555 555 BA BA 55 XX 555 555 555 XX XX XX XX Data RD F0 AA AA AA AA AA B0 30 98 A0 AA AA AA A0 80 98 90 XX 00 PA 2AA 2AA 2AA PA XX PD 55 55 55 PD 10 BA+555 555 555 C6 D0 20 BA+XX XX RD WD 2AA 2AA 2AA 2AA 2AA 55 55 55 55 55 555 555 555 555 555 90 90 A0 80 80 BA+X00 BA+X01 PA 555 555 01 7E PD AA AA 2AA 2AA 55 55 555 SA 10 30 BA+X0E 36 BA+X0F 00/ 01 Second Addr Data Third Addr Data Fourth Addr Data Fifth Addr Data Sixth Addr Data
1 1 4 6 4 6 6 1 1 1 2 3 4 3 2 2 1 2
Legend:
BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. Determined by A18 and A17, see Tables 11 and 12 for more detail. PA = Program Address (A18:A0). Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Program Data (DQ31:DQ0) written to location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
RA = Read Address (A18:A0). RD = Read Data (DQ31:DQ0) from location RA. SA = Sector Address (A18:A11) for verifying (in autoselect mode), erasing, or applying security commands. WD = Write Data. See "Configuration Register" definition for specific write data. Data latched on rising edge of WE#. X = Don't care
Notes:
1. 2. 3. 4. See Table 1 on page 14 for description of bus operations. All values are in hexadecimal. Shaded cells in table denote read cycles. All other cycles are write operations. During unlock cycles, (lower address bits are 555 or 2AAh as shown in table) address bits higher than A11 (except where BA is required) and data bits higher than DQ7 are don't cares. No unlock or command cycles required when bank is reading array data. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information). The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID or device ID information. See the "Autoselect Command" on page 44 section for more information. This command cannot be executed until The Unlock Bypass command must be executed before writing this command sequence. The Unlock Bypass Reset command must be executed to return to normal operation. 9. 10. 11. This command is ignored during any embedded program, erase or suspended operation. Valid read operations include asynchronous and burst read mode operations. The device ID must be read across the fourth, fifth, and sixth cycles. 00h in the sixth cycle indicates ordering option 00, 01h indicates ordering option 01. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Program/Erase Suspend mode. The Program/Erase Suspend command is valid only during a sector erase operation, and requires the bank address. The Program/Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. Command is valid when device is ready to read array data or when device is in autoselect mode. Asynchronous read operations. ACC must be at VID during the entire operation of this command. Command is ignored during any Embedded Program, Embedded Erase, or Suspend operation. The Unlock Bypass Entry command is required prior to any Unlock Bypass operation. The Unlock Bypass Reset command is required to return to the read mode.
5. 6.
12.
13. 14. 15. 16. 17. 18.
7.
8.
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Table 20.
Command (Notes) Reset SecSi Sector Entry SecSi Sector Exit SecSi Protection Bit Program (5, 6) SecSi Protection Bit Status Password Program (5, 7, 8) Password Verify Password Unlock (7, 8) PPB Program (5, 6) All PPB Erase (5, 9, 10) PPB Status (11, 12) PPB Lock Bit Set PPB Lock Bit Status DYB Write (7) DYB Erase (7) DYB Status (12) PPMLB Program (5,6) PPMLB Status (5) SPMLB Program (5, 6) SPMLB Status (5) Cycles
Sector Protection Command Definitions (x32 Mode)
Bus Cycles (Notes 1-4) First Second Third Addr 555 555 555 555 555 555 555 555 555 SG+555 555 555 555 555 SA+555 555 555 555 555 Data 88 90 60 60 38 C8 28 60 60 90 78 58 48 48 58 60 60 60 60 SA SA SA SA PL PL SL SL RD(1) X1 X0 RD(0) 68 RD(0) 68 RD(0) SL 48 SL RD(0) PL 48 PL RD(0) XX OW OW 00 68 RD(0) OW 48 OW RD(0) Fourth Addr Data Fifth Addr Data Sixth Addr Data
Addr Data Addr Data XXX 555 555 555 555 555 555 555 555 555 555 555 555 555 555 555 555 555 555 555 F0 AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55
1 3 4 6 6 4 4 5 6 6 4 3 4 4 4 4 6 6 6 6
PWA[0-1] PWD[0-1] PWA[0-1] PWD[0-1] PWA[0-1] PWD[0-1] SG+WP WP SA+X02 68 60 00/01 SG+WP WP 48 40 SG+WP RD(0) WP RD(0)
Legend:
DYB = Dynamic Protection Bit OW = Address (A5-A0) is (011X10). PPB = Persistent Protection Bit PWA = Password Address. A0 selects between the low and high 32-bit portions of the 64-bit Password PWD = Password Data. Must be written over two cycles. PL = Password Protection Mode Lock Address (A5-A0) is (001X10) RD(0) = Read Data DQ0 protection indicator bit. If protected, DQ0= 1, if unprotected, DQ0 = 0. RD(1) = Read Data DQ1 protection indicator bit. If protected, DQ1 = 1, if unprotected, DQ1 = 0. SA = Sector Address where security command applies. Address bits A18:A11 uniquely select any sector. SG = Sector Group Address BA = Bank Address SL = Persistent Protection Mode Lock Address (A5-A0) is (010X10) WP = PPB Address (A5-A0) is (111010) X = Don't care PPMLB = Password Protection Mode Locking Bit SPMLB = Persistent Protection Mode Locking Bit
Notes:
1. 2. 3. 4. See Table 1 on page 14 for description of bus operations. All values are in hexadecimal. Shaded cells in table denote read cycles. All other cycles are write operations. During unlock cycles, (lower address bits are 555 or 2AAh as shown in table) address bits higher than A11 (except where BA is required) and data bits higher than DQ7 are don't cares. The reset command returns the device to reading the array. The fourth cycle programs the addressed locking bit. The fifth and sixth cycles are used to validate whether the bit was fully programmed. If DQ0 (in the sixth cycle) reads 0, the program command must be issued and verified again. Data is latched on the rising edge of WE#. 8. The entire four bus-cycle sequence must be entered for each portion of the password. 9. The fourth cycle erases all PPBs. The fifth and sixth cycles are used to validate whether the bits were fully erased. If DQ0 (in the sixth cycle) reads 1, the erase command must be issued and verified again. 10. Before issuing the erase command, all PPBs should be programmed in order to prevent over-erasure of PPBs. 11. In the fourth cycle, 00h indicates PPB set; 01h indicates PPB not set. 12. The status of additional PPBs and DYBs may be read (following the fourth cycle) without reissuing the entire command sequence.
5. 6.
7.
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Write Operation Status
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 21 on page 65 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first.
DQ7: Data# Polling
The device features a Data# polling flag as a method to indicate to the host system whether the embedded algorithms are in progress or are complete. During the Embedded Program Algorithm an attempt to read the bank in which programming was initiated produces the complement of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device produces the true last data written to DQ7. Note that DATA# polling returns invalid data for the address being programmed or erased. For example, the data read for an address programmed as 0000 0000 1000 0000b returns XXXX XXXX 0XXX XXXXb during an Embedded Program operation. Once the Embedded Program Algorithm is complete, the true data is read back on DQ7. Note that at the instant when DQ7 switches to true data, the other bits may not yet be true. However, they will all be true data on the next read from the device. Please note that Data# polling may give misleading status when an attempt is made to write to a protected sector. For chip erase, the Data# polling flag is valid after the rising edge of the sixth WE# pulse in the six write pulse sequence. For sector erase, the Data# polling is valid after the last rising edge of the sector erase WE# pulse. Data# polling must be performed at sector addresses within any of the sectors being erased and not a sector that is a protected sector. Otherwise, the status may not be valid. DQ7 = 0 during an Embedded Erase Algorithm (chip erase or sector erase operation) but returns a "1" after the operation completes because it drops back into read mode. In asynchronous mode, just prior to the completion of the Embedded Algorithm operations, DQ7 may change asynchronously while OE# is asserted low. (In synchronous mode, ADV# exhibits this behavior.) The status information may be invalid during the instance of transition from status information to array (memory) data. An extra validity check is therefore specified in the data polling algorithm. The valid array data on DQ31-DQ0 is available for reading on the next successive read attempt. The Data# polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, Erase Suspend, Erase Suspend-Program mode, or sector erase time-out. If the user attempts to write to a protected sector, Data# polling is activated for about 1 s: the device then returns to read mode, with the data from the protected sector unchanged. If the user attempts to erase a protected sector, Toggle Bit (DQ6) is activated for about 150 s; the device then returns to read mode, without having erased the protected sector. Table 21 on page 65 shows the outputs for Data# Polling on DQ7. Figure 6, on page 61 shows the Data# Polling algorithm. Figure 24, on page 80 shows the timing diagram for synchronous status DQ7 data polling.
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START
Read DQ7-DQ0 Addr = VA
DQ7 = Data?
Yes
No No
DQ5 = 1?
Yes Read DQ7-DQ0 Addr = VA
DQ7 = Data?
Yes
No FAIL
Notes:
PASS
1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5.
Figure 6. Data# Polling Algorithm
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RY/BY#: Ready/Busy#
The device provides a RY/BY# open drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or are completed. If the output is low, the device is busy with either a program, erase, or reset operation. If the output is floating, the device is ready to accept any read/ write or erase operation. When the RY/BY# pin is low, the device does not accept any additional program or erase commands with the exception of the Erase suspend command. If the device enters Erase Suspend mode, the RY/BY# output is floating. For programming, the RY/BY# is valid (RY/BY# = 0) after the rising edge of the fourth WE# pulse in the four write pulse sequence. For chip erase, the RY/ BY# is valid after the rising edge of the sixth WE# pulse in the six write pulse sequence. For sector erase, the RY/BY# is also valid after the rising edge of the sixth WE# pulse. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/ BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is "floating"), the reset operation is completed in a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Since the RY/BY# pin is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. An external pull-up resistor is required to take RY/BY# to a VIH level since the output is an open drain. Table 21 on page 65 shows the outputs for RY/BY#. Figure 16, on page 73, Figure 19, on page 75, Figure 21, on page 78 and Figure 23, on page 79 shows RY/BY# for read, reset, program, and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, two immediately consecutive read cycles to any address cause DQ6 to toggle. When the operation is complete, DQ6 stops toggling. For asynchronous mode, either OE# or CE# can be used to control the read cycles. For synchronous mode, the rising edge of ADV# is used or the rising edge of clock while ADV# is Low. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 s, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on "DQ7: Data# Polling" on page 60).
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If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 21 on page 65 shows the outputs for Toggle Bit I on DQ6. Figure 7, on page 64 shows the toggle bit algorithm in flowchart form, and the section "Reading Toggle Bits DQ6/DQ2" on page 63 explains the algorithm. Figure 25, on page 80 shows the toggle bit timing diagrams. Figure 25, on page 80 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on "DQ2: Toggle Bit II". Figure 25, on page 80 shows the timing diagram for synchronous toggle bit status.
DQ2: Toggle Bit II
The "Toggle Bit II" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system performs two immediately consecutive reads at addresses within those sectors that were selected for erasure. (For asynchronous mode, either OE# or CE# can be used to control the read cycles. For synchronous mode, ADV# is used.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 21 on page 65 to compare outputs for DQ2 and DQ6. Figure 7, on page 64 shows the toggle bit algorithm in flowchart form, and the section "Reading Toggle Bits DQ6/DQ2" on page 63 explains the algorithm. See also the "DQ6: Toggle Bit I" on page 62 subsection. Figure 25, on page 80 shows the toggle bit timing diagram. Figure 26, on page 81 shows the differences between DQ2 and DQ6 in graphical form. Figure 27, on page 81 shows the timing diagram for synchronous DQ2 toggle bit status.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 26, on page 81 for the following discussion. Whenever the system initially begins reading toggle bit status, it must perform two immediately consecutive reads of DQ7-DQ0 to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device completed the program or erase operation. The system can read array data on DQ7-DQ0 on the following read cycle. However, if after the initial two immediately consecutive read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data.
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The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7).
START
Read Byte (DQ0-DQ7) Address = VA Read Byte (DQ0-DQ7) Address = VA
(Note 1)
DQ6 = Toggle? Yes
No
No
DQ5 = 1?
Yes Read Byte Twice (DQ 0-DQ7) Adrdess = VA
(Notes 1, 2)
DQ6 = Toggle?
No
Yes FAIL
Notes:
PASS
1. Read toggle bit with two immediately consecutive reads to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to "1". See text.
Figure 7.
Toggle Bit Algorithm
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DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1." This is a failure condition that indicates the program or erase cycle was not successfully completed. The DQ5 failure condition may appear if the system tries to program a "1" to a location that is previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the operation exceeds the timing limits, DQ5 produces a "1." Under both these conditions, the system must issue the reset command to return the device to reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation started. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from "0" to "1." The system may ignore DQ3 if the system can guarantee that the time between additional sector erase commands is always less than 50 s. See also "Sector Erase Command" on page 48. After the sector erase command sequence is written, the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device accepted the command sequence, and then read DQ3. If DQ3 is "1", the internally controlled erase cycle started; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is "0", the device accepts additional sector erase commands. To ensure the command was accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 21 on page 65 shows the outputs for DQ3.
Table 21.
Operation Standard Mode Embedded Program Algorithm Embedded Erase Algorithm Reading within Erase Suspended Sector Reading within Non-Erase Suspended Sector Erase-Suspend-Program
Notes:
Write Operation Status
DQ6 Toggle Toggle No toggle Data Toggle DQ5 (Note 1) 0 0 0 Data 0 DQ3 N/A 1 N/A Data N/A DQ2 (Note 2) No toggle Toggle Toggle Data N/A RY/BY# 0 0 1 1 0
DQ7 (Note 2) DQ7# 0 1 Data DQ7#
Erase Suspend Mode
1. DQ5 switches to `1' when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits. See "DQ5: Exceeded Timing Limits" on page 65 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
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Absolute Maximum Ratings
Storage Temperature, Plastic Packages . . . . . . . . . . . . . . . . -65C to +150C Ambient Temperature with Power Applied . . . . . . . . . . . . . . -65C to +145C VCC, VIO(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 V to + 3.0 V ACC, A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . . . -0.5 V to +13.0 V Address, Data, Control Signals (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 V to 3.60 V All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . . . -0.5 V to +3.60 V Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input at I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See 6. Maximum DC voltage on output and I/O pins is 3.6 V. During voltage transitions output pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 6. 2. Minimum DC input voltage on pins ACC, A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 5. Maximum DC input voltage on pin A9 and OE# is +13.0 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
20 ns +0.8 V -0.5 V -2.0 V 20 ns
20 ns
V CC +2.0 V V CC +0.5 V 2.0 V 20 ns
20 ns
20 ns
Figure 8. Maximum Negative Overshoot Waveform
Figure 9.
Maximum Positive Overshoot Waveform
Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . -40C to +125C
VCC Supply Voltages
VCC for regulated voltage range . . . . . . . . . . . . . . . . . . . . . . . 2.5 V to 2.75 V
VIO Supply Voltages
VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65 V to 2.75 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
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DC Characteristics
Table 22.
Parameter ILI ILIWP ILIT ILO ICCB ICC1 ICC3 ICC4 ICC5 ICC6 ICC7 ICC8 IACC VIL VIH VILCLK VIHCLK VID VOL IOLRB VHH VOH VLKO Description Input Load Current WP# Input Load Current A9, ACC Input Load Current Output Leakage Current VCC Active Burst Read Current (Note 1) VCC Active Asynchronous Read Current (Note 1) VCC Active Program Current (Notes 2, 4) VCC Active Erase Current (Notes 2, 4) VCC Standby Current (CMOS) (Note 5) VCC Active Current (Read While Write) VCC Reset Current (Note 5) Automatic Sleep Mode Current (Note 5) VACC Acceleration Current Input Low Voltage Input High Voltage CLK Input Low Voltage CLK Input High Voltage Voltage for Autoselect Output Low Voltage RY/BY#, Output Low Current (Note 6) Accelerated (ACC pin) High Voltage Output High Voltage Low VCC Lock-Out Voltage (Note 3) VCC = 2.5 V IOL = 4.0 mA, VCC = VCC min VOL = 0.4 V VCC = VCC min IOH = -100 A, VCC = VCC min 1 11.5 VIO -0.4 1.6 2.0 12.5
CMOS Compatible
Test Conditions Min Typ Max 1.0 -25 35 1.0 70 90 Unit A A A A mA
VIN = VSS to VIO, VIO = VIO max VIN = VSS to VIO, VIO = VIO max VCC = VCCmax; A9 = 12.5 V VOUT = VSS to VCC, VCC = VCC max CE# = VIL, OE# = VIL 56 MHz 66 MHz 8 Double-Word
CE# = VIL, OE# = VIL
1 MHz 40 20
10 50 50 60 30 90 60 60 20 -0.5 0.7 x VIO -0.2 0.7 x VCC 11.5 0.3 x VIO 3.6 0.3 x VIO 2.75 12.5 0.4
mA mA mA A mA A A mA V V V V V V mA V V V
CE# = VIL, OE# = VIH, ACC = VIH CE# = VIL, OE# = VIH, ACC = VIH VCC= VCC max, CE# = VCC 0.3 V CE# = VIL, OE# = VIL RESET# = VIL VIH = VCC 0.3 V, VIL = VSS 0.3 V ACC = VHH
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component. 2. ICC active while Embedded Erase or Embedded Program is in progress. 3. Not 100% tested. 4. Maximum ICC specifications are tested with VCC = VCCmax. 5. Current maximum was increased significantly from data sheet Revision B+4, Dated April 8, 2003. 6. Pull-up 6resistor is required.
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DC Characteristics (continued)
Zero Power Flash
5 Supply Current in mA
4
3
2
1 0 0 500 1000 1500 2000 Time in ns 2500 3000 3500 4000
Note: Addresses are switching at 1 MHz
Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
20 2.7 V
16 Supply Current in mA
12
8
4
0 1 2 3 Frequency in MHz
Note: T = -40 C
4
5
Figure 11. Typical ICC1 vs. Frequency
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Test Conditions
Device Under Test CL
Note: Diodes are IN3064 or equivalent
Figure 12.
Test Setup
Table 23. Test Specifications
Test Condition Output Load Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0.0 V - VIO VIO/2 VIO/2 40 Mhz (OJ), 56 Mhz (OM) 66 Mhz (OP) 1 TTL gate 100 pF ns V V V Unit
Key to Switching Waveforms
Waveform Inputs Steady Changing from H to L Changing from L to H Don't Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z) Outputs
Switching Waveforms
VIO VSS In VIO/2 Measurement Level VIO/2 Output
Figure 13.
Input Waveforms and Measurement Levels
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AC Characteristics
VCC and VIO Power-up
Parameter tVCS tVIOS tRSTH Description VCC Setup Time VIO Setup Time RESET# Low Hold Time Test Setup Min Min Min Speed 50 50 50 Unit s s s
tVCS
VCC tVIOS
VIOP tRSTH RESET#
Figure 14. VCC and VIO Power-up Diagram
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AC Characteristics
Table 24. Asynchronous Read Operations
Parameter JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ Std. tRC tACC tCE tOE tDF tDF Description Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Read Toggle and Data# Polling Test Setup Max CE# = VIL Max OE# = VIL OE# = VIL Max Max Max Min Max Min Min Min Speed Options 66 Mhz 55 Mhz 40 Mhz (OP) (OM) (OJ) 54 54 58 20 64 64 69 20 10 2 10 0 10 2 67 67 71 28 Unit ns ns ns ns ns ns ns ns ns ns
tOEH
Output Enable Hold Time (Note 1)
tAXQX
Notes:
tOH
Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (Note 1)
1. Not 100% tested. 2. See Figure 12, on page 69 and Table 23 on page 69 for test specifications
tRC Addresses CE# tOE tOEH WE# HIGH Z Outputs RESET# RY/BY# Output Valid tCE tOH HIGH Z tDF Addresses Stable tACC
OE#
0V
Figure 15.
Conventional Read Operations Timings
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AC Characteristics
Table 25. Burst Mode Read
Parameter JEDEC Std. tBACC Description Burst Access Time Valid Clock to Output Delay Max Min Min Min Min Max Min Max Min Max Max Max Min Min Min Min Min Min Min Min Min Min Max Min Max Max Min 20 2 10 10 6 22 4 3 6 5 20 3 15 15 28 3 17 17 2.5 2.5 18 2 0 23 24 1.5 13 2 9 FBGA 9.5 PQFP 2 54.45 15.15 60 3 3 2.5 2.5 3 3 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Speed Options 66 Mhz (0P) 9 FBGA 9.5 PQFP 56 Mhz (0M) 10 FBGA 10 PQFP 6 1.5 15 3 10 FBGA 10 PQFP 3 63.55 17.85 1.5 22 3 17 3 67 25 40 Mhz (0J) Unit 17 ns ns ns ns ns ns ns ns ns
tADVCS ADV# Setup Time to Rising Edge of CLK tADVCH ADV# Hold Time from Rising Edge of CLK tADVP ADV# Pulse Width tDVCH Valid Data Hold from CLK tDIND tINDH tIACC tCLK tCR tCF tCH tCL tDS tDH tAS tAH tCS tCH tACS tACH tOE tDF tEHQZ tOEZ tCEZ tCES CLK to Valid IND/WAIT# IND/WAIT# Hold from CLK CLK to Valid Data Out, Initial Burst Access CLK Period CLK Rise Time CLK Fall Time CLK High Time CLK Low Time Data Setup to WE# Rising Edge Data Hold from WE# Rising Edge Address Setup to Falling Edge of WE# Address Hold from Falling Edge of WE# CE# Setup Time CE# Hold Time Address Setup Time to CLK Address Hold Time from ADV# Rising Edge of CLK while ADV# is Low Output Enable to Output Valid Output Enable to Output High Z Chip Enable to Output High Z CE# Setup Time to Clock
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AC Characteristics
tCES CE# CLK tADVCS ADV# tADVCH tACS Addresses
Aa
tCEZ
tACH
tBDH
tBACC
Da Da + 1 Da + 2 Da + 3 Da + 31
Data tIACC OE#* tOE tOEZ
IND#
Figure 16.
Burst Mode Read (x32 Mode)
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AC Characteristics
CLK ADV# CE# Addresses Data
tAS tAH
tCS Stable Address tWC Valid Data tDS
tCH
tDH
WE# OE# IND/WAIT#
tOEH tWPH
Figure 17. Asynchronous Command Write Timing
Note: All commands have the same number of cycles in both asynchronous and synchronous modes, including the READ/RESET command. Only a single array access occurs after the F0h command is entered. All subsequent accesses are burst mode when the burst mode option is enabled in the Configuration Register.
CE#
tCES
CLK
tADVP
tADVCS
tAP
ADV# Addresses
tACS tAS Valid
tACS tWC
tACH tEHQZ Data Out
Valid Address tADVCH
Data
Data In tWADVH
tWCKS
tOE
tDF
OE# WE# IND/WAIT#
tDS tWP
tDH
tWADVH2
Figure 18. Synchronous Command Write/Read Timing
Note: All commands have the same number of cycles in both asynchronous and synchronous modes, including the READ/RESET command. Only a single array access occurs after the F0h command is entered. All subsequent accesses are burst mode when the burst mode option is enabled in the Configuration Register.
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AC Characteristics
Table 26. Hardware Reset (RESET#)
Parameter JEDEC Std. tREADY tREADY tRP tRH tRPD Description RESET# Pin Low (During Embedded Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read or Write (See Note) RESET# Pulse Width RESET# High Time Before Read (See Note) RESET# Low to Standby Mode Test Setup Max Max Min Min Min All Speed Options 11 500 500 50 20 Unit s ns ns ns s
Note: Not 100% tested.
RY/BY#
CE#, OE# tRH RESET# tRP tReady
Reset Timing to Bank NOT Executing Embedded Algorithm Reset Timing to Bank Executing Embedded Algorithm
tReady RY/BY# tRB CE#, OE#
RESET# tRP
Figure 19. RESET# Timings
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AC Characteristics
Data
Program/Erase Command tDS tDH
WE#
tWPWS
tWP
WP# RY/BY#
Valid WP# tCH tWPRH
Figure 20. WP# Timing
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AC Characteristics
Erase/Program Operations
Table 27. Erase/Program Operations
Parameter JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHWL tELWL tWHEH tWLWH tWHWL Std. tWC tAS tAH tDS tDH tGHWL tCS tCH tWP tWPH tWADVH1 tWADVH2 tWCKS tWHWH1 tWHWH2 tWHWH1 tWHWH2 tVCS tRB tBUSY tWPWS tWPRH
Notes:
Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup to WE# Rising Edge Data Hold from WE# Rising Edge Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time WE# Width Write Pulse Width High WE# Falling Edge After ADV# Falling Edge WE# Rising Edge After ADV# Rising Edge WE# Rising Edge Setup to CLK Rising Edge Programming Operation (Note 2) Double-Word Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min Min Max Min Max
All Speed Options 60 0 25 15 2 0 0 2 25 30 0 10 5 18 1.0 50 0 90 20 2
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns s sec. s ns ns ns ns
Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Recovery Time from RY/BY# RY/BY# Delay After WE# Rising Edge WP# Setup to WE# Rising Edge with Command WP# Hold after RY/BY# Rising Edge
1. Not 100% tested. 2. See Table 29 on page 85 for more information.
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AC Characteristics
Program Command Sequence (last two cycles) tWC Addresses 555h tAS PA tAH CE# OE# tWP WE# tCS tDS Data tDH PD tBUSY RY/BY# Statu DOUT tRB tWPH tWHWH1 PA PA Read Status Data (last two cycles)
tCH
A0h
VCC tVCS
Notes: PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 21. Program Operation Timings
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AC Characteristics
Erase Command Sequence (last two cycles) tWC Addresses 2AAh tAS SA
555h for chip erase
Read Status Data
VA tAH
VA
CE# tCH tWP WE# tCS tDS tDH Data 55h 30h
10 for Chip Erase In Progress Complete
OE#
tWPH
tWHWH2
tBUSY RY/BY# tVCS VCC
tRB
Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Table 21 on page 65).
Figure 22. Chip/Sector Erase Operation Timings
tWC Addresses
Valid PA
tRC
Valid RA
tWC
Valid PA
tWC
Valid PA
tAH tACC CE# tCE tOE OE# tOEH tWP WE# tWPH tDS tDH Data
Valid In
tCPH
tCP
tGHWL tWPH
tDF tOH
Valid Out Valid In Valid In
tSR/W
WE# Controlled Write Cycle Read Cycle CE# Controlled Write Cycles
Figure 23. November 5, 2004 S29CD016_00_A4
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AC Characteristics
tRC Addresses VA tACC tCE CE# tCH OE# tOEH WE# tOH DQ7
Complement Complement True Valid Data
High Z
tWC VA VA
tOE tDF
Data tBUSY RY/BY#
Status Data
Status Data
True
Valid Data
High Z
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 24. Data# Polling Timings (During Embedded Algorithms)
tRC Addresses VA tACC tCE CE# tCH OE# tOEH WE# tOH DQ6/DQ2 tBUSY RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle.
High Z
VA
VA
VA
tOE tDF
Valid Status (first read)
Valid Status (second read)
Valid Status (stops toggling)
Valid Data
Figure 25. Toggle Bit Timings (During Embedded Algorithms)
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AC Characteristics
Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete
Erase Suspend Read
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector.
Figure 26.
DQ2 vs. DQ6 for Erase/Erase Suspend Operations
CE#
CLK
AVD#
Addresses
VA
VA
OE#
tOE tOE Status Data Status Data
Data
RDY
Notes:
1. The timings are similar to synchronous read timings and asynchronous data polling Timings/Toggle bit Timing. 2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the toggle bits stops toggling. 3. RDY is active with data (A18 = 0 in the Configuration Register). When A18 = 1 in the Configuration Register, RDY is active one clock cycle before data. 4. Data polling requires burst access time delay.
Figure 27. Synchronous Data Polling Timing/Toggle Bit Timings
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AC Characteristics
VIH
RESET#
SA, A6, A1, A0
Valid* Sector Protect/Unprotect
Valid* Verify 40h/48h***
Sector Protect: 150 s Sector Unprotect: 15 ms
Valid*
Data 1 s CE#
60h
60h/68h**
Status
WE#
OE#
* Valid address for sector protect: A[7:0] = 3Ah. Valid address for sector unprotect: A[7:0] = 3Ah. ** Command for sector protect is 68h. Command for sector unprotect is 60h. *** Command for sector protect verify is 48h. Command for sector unprotect verify is 40h.
Figure 28.
Sector Protect/Unprotect Timing Diagram
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AC Characteristics
Table 28.
Parameter JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Std. tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tGHEL tWS tWH tWP tWPH tWADVH tWCKS tELEH tEHEL tWHWsH1 tWHWH2
Notes:
Alternate CE# Controlled Erase/Program Operations
All Speed Options Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Double-Word Typ Typ 65 0 45 35 2 0 0 0 0 32 40 0 5 16 30 18 1.0 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns s sec.
Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time WE# Width Write Pulse Width High WE# Falling Edge After WE# Rising Edge Setup to Clk Rising Edge CE# Pulse Width CE# Pulse Width High Programming Operation (Note 2) Sector Erase Operation (Note 2)
tCP tCPH tWHWH1 tWHWH2
1. Not 100% tested. 2. See the section for more information.
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AC Characteristics
555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase
Data# Polling PA
Addresses tWC tWH WE# tGHEL OE# tCP CE# tWS tCPH tDS tDH Data tRH
A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase
tAS tAH tWPH tWP
tWHWH1 or 2
tBUSY
DQ7#
DOUT
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device. 2. The figure indicates the last two bus cycles of the command sequence.
Figure 29. Alternate CE# Controlled Write Operation Timings
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Table 29.
Parameter Sector Erase Time Chip Erase Time Double Word Program Time Accelerated Double Word Program Time Accelerated Chip Program Time Chip Program Time (Note 3)
Notes:
Erase and Programming Performance
Typ (Note 1) 1.0 46 18 8 5 Max (Note 2) 5 230 250 130 50 120 Unit s s s s s s Excludes system level overhead (Note 5) Comments Excludes 00h programming prior to erasure (Note 4)
x32
12
1. Typical program and erase times assume the following conditions: 25C, 2.5 V VCC, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 145C, VCC = 2.5 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 19 on page 58 and Table 20 on page 59 for further information on command definitions. 6. PPBs have a program/erase cycle endurance of 100 cycles.
Table 30. PQFP and Fortified BGA Pin Capacitance
Parameter Symbol CIN COUT CIN2
Notes:
Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance
Test Setup VIN = 0 VOUT = 0 VIN = 0
Typ 6 8.5 7.5
Max 7.5 12 9
Unit pF pF pF
1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz.
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Physical Dimensions
PRQ080-80-Lead Plastic Quad Flat Package
6 3 PIN S D D1 D3 PIN R 0MIN. PIN ONE I.D. 0.30 0.05 R GAGE 0.25 PLANE E3 -A-BE1 E 3 6 L 0-7 7 TYP. b 4 ccc C A 0.20 MIN. FLAT SHOULDER 7 TYP.
aa a M C A B S D S DETAIL X
SEE NOTE 3
PIN P -DSEE DETAIL X e BASIC A2 A1 S S A 2 -A-CSEATING PLANE PIN Q
b c SECTION S-S
PACKAGE JEDEC SYMBOL A A1 A2 b c D D1 D3 e E E1 E3 aaa ccc L P Q R S 0.73 MIN -0.25 2.70 0.30 0.15 17.00 13.90 --23.00 19.90 ----
PQR 080 MO-108(B)CB-1 NOM --2.80 --17.20 14.00 12.0 0.80 23.20 20.00 18.40 0.20 0.10 0.88 24 40 64 80 1.03 MAX 3.35 -2.90 0.45 0.23 17.40 14.10 --23.40 20.10 ---SEE NOTE 3 REFERENCE SEE NOTE 3 REFERENCE BASIC, SEE NOTE 7 SEE NOTE 4 NOTES
NOTES: 1. 2. ALL DIMENSIONS AND TOLERANCES CONFORM TO ANSI Y14.5M-1982. DATUM PLANE -A- IS LOCATED AT THE MOLD PARTING LINE AND IS COINCIDENT WITH THE BOTTOM OF THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY. DIMENSIONS "D1" AND "E1" DO NOT INCLUD MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 mm PER SIDE. DIMENSIONS "D1" AND "E1" INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -ADIMENSION "B" DOES NOT INCLUDE DAMBAR PROTRUSION. CONTROLLING DIMENSIONS: MILLIMETER. DIMENSIONS "D" AND "E" ARE MEASURED FROM BOTH INNERMOST AND OUTERMOST POINTS. DEVIATION FROM LEAD-TIP TRUE POSITION SHALL BE WITHIN 0.0076 mm FOR PITCH > 0.5 mm AND WITHIN 0.04 FOR PITCH < 0.5 mm. LEAD COPLANARITY SHALL BE WITHIN: (REFER TO 06-500) 1 - 0.10 mm FOR DEVICES WITH LEAD PITCH OF 0.65 - 0.80 mm 2 - 0.076 mm FOR DEVICES WITH LEAD PITCH OF 0.50 mm. COPLANARITY IS MEASURED PER SPECIFICATION 06-500. HALF SPAN (CENTER OF PACKAGE TO LEAD TIP) SHALL BE WITHIN 0.0085".
3.
4. 5. 6. 7.
8.
9.
3213\38.4C
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Physical Dimensions
LAA080-80-ball Fortified Ball Grid Array (13 x 11 mm)
0.20 C 2X
D
A
D1
eD
K
J
H
G
F
E
D
C
B
A 8 7 6
7
SE
eE
5
E
4 3
E1
0
0 .5
2 1
1.000.5
A1 CORNER ID. (INK OR LASER)
B
1.000.5
A1 CORNER
TOP VIEW
0.20 C 2X
6
NXb
0.25 M C A B 0.10 M C
SD
7
A1 CORNER
BOTTOM VIEW
A
A2 A1
SEATING PLANE
C
0.25 C
0.15 C
SIDE VIEW
PACKAGE JEDEC
LAA 080 N/A 13.00 x 11.00 mm PACKAGE NOTE
NOTES: 1. 2. MAX 1.40 --PROFILE HEIGHT STANDOFF BODY THICKNESS BODY SIZE BODY SIZE MATRIX FOOTPRINT MATRIX FOOTPRINT MATRIX SIZE D DIRECTION MATRIX SIZE E DIRECTION BALL COUNT 0.70 BALL DIAMETER BALL PITCH - D DIRECTION BALL PITCH - E DIRECTION SOLDER BALL PLACEMENT 8. 9. 7 6 3. 4. 5. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. ALL DIMENSIONS ARE IN MILLIMETERS. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW , SD OR SE = e/2 N/A "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
3214\38.12C
SYMBOL A A1 A2 D E D1 E1 MD ME N b eD eE SD/SE
MIN -0.40 0.60
NOM ---13.00 BSC. 11.00 BSC. 9.00 BSC. 7.00 BSC. 10 8 80
0.50
0.60 1.00 BSC. 1.00 BSC. 0.50 BSC
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Revision Summary
Revision A1 (March 22, 2004)
Performance Characteristics Burst Mode Read: changed to 66-MHz. Ordering Information Changed device number/description call out to show the two 16-Mbit configurations. Table 12 and Table 13 Corrected which sectors report to which bank. Asynchronous Read Operations Table Removed the OR Speed option.
Revision A2 (May 24, 2004)
"Spansion" logo Replaces AMD in bullet seven, first column. Fujitsu MBM29LV and MBM129F Added to bullet ten, first column. Ultra Low Power Consumption Bullet "capable of..." deleted from first bullet, second column. Block diagram Reset# moved, RY/BY added. Simultaneous Read/Write Circuit Block Diagram RY/BY added; Bank 1 added; Bank 0 added. Pin Configuration "A pull-up resistor of 10k..." added to RY/BY#. Ordering Information Additional ordering options updated to "protects sectors 44 and 45". Device Number/Description Bit description altered. Simultaneous Read/Write Operation With Zero Latency Table 3 and 4 Bank # change. Auto Select Mode Table 5: Manufacturer ID Row updated (A3, A2). Table 5: DQ7 to DQ0 Column updated. Linear Burst Read Operations Table 6: "(x16)" removed from header row. IND/Wait# Operation in Linear Mode Figure 2 - "Address 2" removed. Initial Burst Access Delay Control Figure 3 - Valid Address line changed. Notes - Clock cycles updated.
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Configuration Register Table 9: CR14 reserve bit assigned ASD. Table 9: Speed options changed. Table 10: CR14 reserve changed to ASD. Table12. Sector Addresses for Ordering Option 00 Bank changed to 0. Bank changed to 1. Table 13. Sector Addresses for Ordering Option 01 Bank changed to 0. Bank changed to 1. Table 16. Device Geometry Definition 0005 = supports x16 and x32 via WORD#..." Removed. Unlock Bypass Command Sequence Table "18" replaced with "19" in text. Table 19. Memory Array Command Definitions (x32 Mode) Autoselect (7) - Device ID (11); Fifth/Data changed to "36". Table 20. Sector Protection Command Definitions (x32 Mode) PBB Status (11,12) Third/Addr changed to "SG". PPB Lock Bit Status; Third/Addr "BA" removed. DYB Status; Third/Addr changed to "SA". Absolute Maximum Ratings Address, Data... changed to 3.6v. Table 22 CMOS Compatible Input High Voltage Max changed to 3.6. RY/BY#, OUtput Low Current Min removed, Max added (8). Table 23. Test Specifications Test conditions changed to OJ,OM,OP. AC Characteristics Figure 14 updated RESET#. Table number 24. Asynchronous Read Operations OM speed options; Output Enable to Output Delay "20" added. Table 26. Hardware Reset Last row deleted. Erase/Program Operations TWADVH row added. TWCKS row added. Table 27. Alternate CE# Controlled Erase/Program Operations TWPH row added, TWADVH row added, TWCKS row added. Physical Dimensions Latchup characteristics deleted. Pin Description "WAIT# Provides data valid feedback only when the burst length is set to continuous." Removed from document.
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Information
Revision A3 (May 26, 2004)
Block Diagram on page 6 Moved RESET# to point to the State Control/Command Register. Figure 2, on page 22 Updated note added "Double-Word" to figure title. Table 9, "Configuration Register Definitions," on page 24 Added "CR14 = Automatic Sleep Mode..." configurations. Table 1, "Sector Addresses for Ordering Option 00," on page 33 Re-inserted previously missing data. Removed "Note 1" from Sector SA1. Added "Note 3" to Sector SA44 and SA45. Moved Sectors SA15 - SA30 to Bank 1. Table on page 35 Added "Note 3" to Sector SA45.
Revision A4 (November 5, 2004)
Global Added reference links Added Colophon Updated Trademark Product Selector Guide Removed note from Product Selector Guide table Block Diagram Changed text on Input/Output buffers to show DQ0 to DQ31 Pin Configuration Changed text in ACC description Accelerated Program and Erase Operations Changed text in this paragraph Table 5 Change Address text column. SecSI Sector Entry Command Changed address text in this paragraph Figure 18 Table 27 t Changed time spec call out from 10 ns to WADVH2 t Added new row for WADVH2
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S29CD016G
S29CD016_00_A4 November 5, 2004
Advance
Information
Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion LLC product under development by Spansion LLC. Spansion LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the use of the information in this document. Copyright (c)2004 Spansion LLC. All rights reserved. Spansion, the Spansion logo, and MirrorBit are trademarks of Spansion LLC. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
November 5, 2004 S29CD016_00_A4
S29CD016G
91

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